PUBLICATIONS:

  1. F. Zhang, H. Zhang, S. Krylyuk, C.A. Milligan, Y. Zhu, D.Y. Zemlyanov, L.A. Bendersky, B.P. Burton, A.V. Davydov and Joerg Appenzeller, Electric-field induced structural transition in vertical MoTe2 and Mo1�xWxTe2 based resistive memories, Nature Materials, 18 (2019) 55
  2. P. Wu, T. Ameen, H. Zhang, L.A. Bendersky, H. Ilatikhameneh, G. Klimeck, R. Rahman, A.V. Davydov, J. Appenzeller, Complementary Black Phosphorus Tunneling Field-Effect Transistors, ACS Nano, 13 (2019) 377
  3. A. Rani, K. DiCamillo, S. Krylyuk, R. Debnath, P. Taheri, M. Paranjape, C.E. Korman, M.E. Zaghloul and A.V. Davydov, Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness, Proc. of SPIE, 10725 (2018), DOI:10.1117/12.2503888
  4. K.M. Freedy, M.G. Sales, P.M. Litwin, S. Krylyuk, P. Mohapatra, A. Ismach, A.V.  Davydov, S.J. McDonnell, MoS2 cleaning by acetone and UV-ozone: Geological and synthetic material, Appl. Surf. Sci. , 478 (2019) 183
  5. B. Kalanyan, R. Beams, M.B. Katz, A.V. Davydov, J.E. Maslar and R.K. Kanjolia, MoS2 thin films from a (NtBu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process, JVST A, 37 (2019) 010901
  6. K. DiCamillo, S. Krylyuk, W. Shi, A. Davydov and M. Paranjape, Automated mechanical exfoliation of MoS2 and MoTe2 layers for two-dimensional materials applications, IEEE Trans. Nanotechnology, 18 (2019) 144
  7. F. Zhang, H. Zhang, P.R. Shrestha, Y. Zhu, K. Maize, S. Krylyuk, A. Shakouri, J.P. Campbell, K.P. Cheung, L.A. Bendersky, A.V. Davydov and J. Appenzeller, An Ultra-fast Multi-level MoTe2-based RRAM, IEEE International Electron Devices Meeting (IEDM) (2018), DOI: 10.1109/IEDM.2018.8614512
  8. H.M. Hill, A.F. Rigosi, S. Krylyuk, J. Tian, N.V. Nguyen, A.V. Davydov, D.B. Newell, and A.R. Hight Walker, Comprehensive optical characterization of atomically thin NbSe2, Physical Review B, 98 (2018) 165109
  9. D. Ruzmetov, M.R. Neupane, A. Herzing, T.P. O�Regan, A. Mazzoni, M.L. Chin, R.A. Burke, F.J. Crowne, A.G. Birdwell1, D.E. Taylor, A. Kolmakov, K. Zhang, J.A. Robinson, A.V. Davydov and T.G. Ivanov, Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN, 2D Materials, 5 (2018) 045016
  10. O.B. Aslan, I.M. Datye, M.J. Mleczko, K.S. Cheung, S. Krylyuk, A. Bruma, I. Kalish, A.V.  Davydov, E. Pop, and T.F. Heinz, Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1-xWxTe2, Nano Lett., 18 (2018) 2485
  11. A.N. Ramanayaka, H-S. Kim, J.A. Hagmann, R.E. Murray, K. Tang, F. Meisenkothen, H.R. Zhang, L.A. Bendersky, A.V. Davydov, N.M. Zimmerman, C.A. Richter, and J.M. Pomeroy, Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures, AIP Adv. 8 (2018) 075329
  12.  B. Sirota, N. Glavin, S. Krylyuk, A.V. Davydov, and A.A. Voevodin, Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors, Scientific Reports, 8 (2018) 8668

  13. F. Zhang, S. Krylyuk, H. Zhang, C.A. Milligan, D.Y. Zemlyanov, L.A. Bendersky, A.V. Davydov, and J. Appenzeller, Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices, https://arxiv.org/pdf/1709.03835

  14. K.H. Smithe, A.V. Krayev, C.S. Bailey, H.R. Lee, E. Yalon, O.B. Aslan, M.M. Rojo, S. Krylyuk, P. Taheri, A.V. Davydov, T.F. Heinz, and E. Pop, Nanoscale Heterogeneities in Monolayer MoSe2 Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy, ACS Appl. Nano Mater. 1 (2018) 572

  15. A.Y. Koposov, B.T. Spann, A. Bruma, P. Schuele,K.Bertness, and A. Davydov, High-Temperature Photoluminescence in Colloidal �Quasi� 2D Materials, J. Phys. Chem C 122 (2018) 5119

  16. R.R Pandey, H.S. Alshahrani, S. Krylyuk, E.H. Williams, A.V. Davydov, and C.C. Chusuei, Electrochemical Detection of Acetaminophen with Silicon Nanowires, Electroanalysis 30 (2018) 886

  17. S.M. Oliver, R. Beams, S. Krylyuk, I. Kalish, A.K. Singh, A. Bruma, F. Tavazza, J. Joshi, I.R. Stone, S.J. Stranick, A.V. Davydov and P.M. Vora,  The structural phases and vibrational properties of Mo1−xWxTe2 alloys, 2D Mater. 4 (2017) 045008

  18. B. Kalanyan, W.A. Kimes, R. Beams, S.J. Stranick, E. Garratt, I. Kalish, A.V. Davydov, R.K. Kanjolia, and J.E. Maslar, Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition, Chem. Mater. 29 (2017) 6279

  19. D. Zhang, J. Ha, H. Baek, Y-H. Chan, F.D. Natterer, A.F. Myers,J.D. Schumacher, W.G. Cullen, A.V. Davydov, Y. Kuk, M.Y. Chou, N.B. Zhitenev, and J.A. Stroscio, Strain engineering a 4a�√3a charge-density-wave phase in transition-metal dichalcogenide 1T-VSe2, Phys. Rev. Materials 1 (2017) 024005

  20. T.P. O�Regan, D. Ruzmetov, M.R. Neupane, R.A. Burke, A.A. Herzing, K. Zhang, A.G. Birdwell, D.E. Taylor, E.F.C. Byrd, S.D. Walck, A.V. Davydov, J.A. Robinson, and T.G. Ivanov, Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN, APL 111 (2017) 051602

  21. H. Zhu, H. Li, J.W.F. Robertson, A. Balijepalli, S. Krylyuk, A.V. Davydov, J.J. Kasianowicz, J.S. Suehle, and Q. Li, Novel nanofluidic chemical cells based on self-assembled solid-state SiO2 nanotubes, Nanotechnology 28 (2017) 435601

  22. Y. Liu, A. Rahimian, S. Krylyuk, T. Vu, B. Crulhas, G. Stybayeva, M. Imanbekova, D.-S. Shin, A. Davydov, and A. Revzin, Nanowire Aptasensors for Electrochemical Detection of Cell-Secreted

    Cytokines, ACS Sensors 2 (2017) 1644

  23. S. Guo, A. Arab, S. Krylyuk, A.V. Davydov, and M.E. Zaghloul, Fabrication and Characterization of Humidity Sensors based on CVD Grown MoS2 Thin Film, Proceedings 17th IEEE International Conference on Nanotechnology, Pittsburgh, USA, July 25-28, 2017

  24. M. Constantinou, K.F. Hoettges, S. Krylyuk, M.B. Katz, A. Davydov, G.-P. Rigas, V. Stolojan, M.P. Hughes, and M. Shkunov, Rapid determination of nanowires electrical properties using a dielectrophoresis-well based system, Appl. Phys. Lett. 2017, v.110, 133103

  25. X. Ren, A.K. Singh, L. Fang, M.G. Kanatzidis, F. Tavazza, A.V. Davydov, and L.J. Lauhon, Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3, Nano Letters, 2016, v. 16, 6064

  26. D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G.R. Bhimanapati, S.M. Eichfeld, R.A. Burke, P.B. Shah, T.P. O�Regan, F.J. Crowne, A.G. Birdwell, J.A. Robinson, A.V. Davydov, and T.G. Ivanov, Vertical 2D/3D semiconductor heterostructures based on epitaxial Molybdenum Disulfide and Gallium Nitride, ACS Nano, 2016, v. 10, 3580

  27. R. Beams,L.G. Cançado, S. Krylyuk,I. Kalish, B. Kalanyan, A.K. Singh, K. Choudhary, A. Bruma, P.M. Vora, F. Tavazza, A.V. Davydov, and S.J. Stranick, Characterization of Few-Layer 1T′ MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering, ACS Nano, 2016, v. 10, 9626

  28. M.R. Hasan, E.S. Arinze, A.K. Singh, V.P. Oleshko, S. Guo, A. Rani, Y. Cheng, I. Kalish, M.E. Zaghloul, M.V. Rao, N.V. Nguyen, A. Motayed, A.V. Davydov, S.M. Thon, and R. Debnath, An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors, Adv. Electronic Mat., 2016, v.2, 1600182

  29. J.E. Butler, A. Vikharev, A. Gorbachev, M. Lobaev, A. Muchnikov, D. Radischev, V. Isaev, V. Chernov, S. Bogdanov, M. Drozdov, E. Demidov, E. Surovegina, V.Shashkin, A. Davydov, H. Tan, L. Meshi, A.C. Pakpour-Tabrizi, M.-L. Hicks, and R.B. Jackman, Nanometric diamond delta doping with boron, Physica Status Solidi RRL, 2016, 1�6/DOI 10.1002/pssr.201600329

  30. J. Joshi, I.R. Stone, R. Beams, S. Krylyuk, I. Kalish, A.V. Davydov, and P.M. Vora, Phonon anharmonicity in bulk -MoTe
  31. E. Hitz,J. Wan, A.Patel,Y. Xu, L. Meshi, J. Dai, Y. Chen, A. Lu, A.V. Davydov and L. Hu, Electrochemical Intercalation of Lithium Ions into NbSe2 Nanosheets, ACS Appl. Materials and Interfaces, 2016, v. 8, 11390
  32. F.W. DelRio, R.M. White, S. Krylyuk, A.V. Davydov, L.H. Friedman, and R.F. Cook, Near-theoretical fracture strengths in native and oxidized silicon nanowires, Nanotechnology, 2016 v. 27, 31LT02
  33. A. Arab, A.V. Davydov, D.A. Papaconstantopoulos, and Q. Li, Monolayer MoS2 Nanoribbons as a Promising Material for Both n-type and p-type Legs in Thermoelectric Generators, J. of Elecgtronic Materials, 2016, p. 1-11
  34. M. M�ller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, S. Krylyuk, R. Debnath, J-Y. Ha, B. Wen, P. Blanchard, A. Motayed, M.R. King, A.V. Davydov, and J. Christen, Structural and optical nanoscale analysis of GaN core�shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111), Jap. J. Appl. Phys., 2016, v. 55, 05FF02

  35. D. Sharma, A. Motayed, P.B. Shah, M. Amani, M. Georgieva, A.G. Birdwell, M. Dubey, Q. Li, and A.V. Davydov, Transfer characteristics and low-frequency noise in single- and multi-layer MoS2 field-effect transistors, Appl. Phys. Lett., 2015, v. 107, 162102

  36. A.K. Singh, R.G. Hennig, A.V. Davydov, and F. Tavazza, Al2O3 as a suitable substrate and a dielectric layer for n-layer MoS2, Appl. Phys. Lett., 2015, v. 107, 053106

  37. G. Liu, B. Wen, T. Xie, A. Castillo, J-Y. Ha, N.Sullivan, R. Debnath, A.V. Davydov, M. Peckerar, A. Motayed, Top�down fabrication of horizontally-aligned gallium nitride nanowire arrays for sensor development, Microelectronic Engineering, 2015, v. 142, 58

  38. E.H. Williams, J-Y. Ha, M. Juba, B. Bishop, S. Krylyuk, A. Motayed, M.V. Rao, J.A. Schreifels, A.V. Davydov, Real-time electrical detection of the formation and destruction of lipid bilayers on silicon nanowire devices, Sensing and Bio-Sensing Research, 2015, v. 4, 103
  39. T. Xie, N. Sullivan, K. Steffens, B. Wen, G. Liu, R, Debnath, A.V. Davydov, R. Gomez, and A. Motayed, UV-assisted room-temperature chemiresistive NO2 sensor based on TiO2 thin film, J. Alloys and Compounds, 2015, v. 653, 255
  40. P. Zhang, P. Liu, S. Siontas, A. Zaslavsky, D. Pacifici, J-Y. Ha, S. Krylyuk, and A. V. Davydov, Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications, J. Appl. Phys., 2015, v. 117, 125104
  41. S. Berweger, J.C.  Weber, J. John, J.M. Velazquez, A. Pieterick, N.A. Sanford, A.V. Davydov, B. Brunschwig, N.S. Lewis, T.M. Wallis, and  P. Kabos, Microwave Near-Field Imaging of Two-Dimensional Semiconductors, Nanoletters, 2015, v. 15, 1122
  42. S. Krylyuk, R. Debnath, H.P. Yoon, M.R. King, J-Y Ha, B. Wen, A. Motayed, and A.V. Davydov, Faceting control in core-shell GaN micropillars using selective epitaxy, APL-Materials, 2014, v. 2, 106104
  43. D. Sharma, M. Amani, A. Motayed, P.B. Shah, A.G. Birdwell, S. Najmaei, P.M. Ajayan, J. Lou, M. Dubey, Q. Li and A.V. Davydov, Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices, Nanotechnology, 2014, v. 25, 155702
  44. D. Zhang, H. Baek, J.-H. Ha, T. Zhang, J. Wyrick, A.V. Davydov, Y. Kuk, and J.A. Stroscio, Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states, Phys. Rev. B, 2014, v. 89, 245445
  45. R. Debnath,  J-Y. Ha, B. Wen, D. Paramanik, A. Motayed, M.R. King, and A.V. Davydov,  Top-down fabrication of large-area GaN micro- and nanopillars, J. Vac. Sci. Technol. B, 2014, v. 32, p. 021204
  46. V.P. Oleshko, T. Lam, D. Ruzmetov, P. Haney, H.J. Lezec, A.V. Davydov, S. Krylyuk, J. Cumings, A.A. Talin, Miniature all-solid-state heterostructure nanowire Li-ion batteries as a tool for engineering and structural diagnostics of nanoscale electrochemical processes, Nanoscale, 2014, v. 6, 11756
  47. E.H. Williams, A.V. Davydov, V.P. Oleshko, K.L. Steffens, I. Levin, N.J. Lin, K.A. Bertness, A.K. Manocchi, J.A. Schreifels, and M.V. Rao, Solution-based functionalization of gallium nitride nanowires for protein sensor development, Surface Science, 2014, v. 627, 23
  48. H. Yima, W.Y. Kong, S-J. Yoon, S. Nahm, H-W. Jang, Y-E. Sung, J-Y. Ha, A.V. Davydov, J-W. Choi, 3-dimensional hemisphere-structured LiSn0.0125Mn1.975O4 thin-film cathodes, Electrochem. Communications, 2014, v. 43, 36
  49. D. Sharma, A. Motayed, S. Krylyuk, Q. Li, and A.V. Davydov, Detection of Deep-Levels in Doped Silicon Nanowires Using Low-Frequency Noise Spectroscopy, IEEE Transactions on  Electron Devices, 2013, v. 60, p 4206
  50. E.H. Williams, JA Schreifels, MV Rao, AV Davydov, VP Oleshko, NJ Lin, KL Steffens, S Krylyuk, KA Bertness, AK Manocchi, Y Koshka, Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications, J. Mater. Res., 2013, v. 28, 68
  51. Z. Ma, D McDowell, E. Panaitescu, A.V. Davydov, M. Upmanyu and L. Menon, Vapor�liquid�solid growth of serrated GaN nanowires: shape selection driven by kinetic frustration, J. Mater. Chem. C, 2013, v. 1, 7294
  52. J Shi, Z.D. Li, A. Kvit, S. Krylyuk, A.V. Davydov, X.D. Wang, Electron Microscopy Observation of TiO2 Nanocrystal Evolution in High-Temperature Atomic Layer Deposition, Nano Letters, 2013, v. 13, 5727
  53.  G.S. Aluri, A. Motayed, A.V. Davydov, V. P. Oleshko, K.A. Bertness, and M.V. Rao, Nitro-Aromatic Explosive Sensing Using GaN Nanowire-Titania Nanocluster Hybrids, IEEE Sensors Journal, 2013, v. 13, 1883
  54.  M.A. Real, E.A. Lass, F-H. Liu, T. Shen, G.R. Jones, J.A. Soons, D.B. Newell, A.V. Davydov, and R.E. Elmquist, Graphene Epitaxial Growth on SiC(0001) for Resistance Standards, IEEE Transact. on Instrument. and Measurement, 2013, v. 62, 1454
  55. R. Venkatesh K.G. Thirumalai, B. Krishnan, A.V. Davydov, J.N. Merrett, Y. Koshka, SiC nanowire vapor�liquid�solid growth using vapor-phase catalyst delivery, J. Mater. Res., 2013, v. 28, 50
  56. S. Krylyuk, D. Paramanik, M. King, A. Motayed, J-Y. Ha, J.E. Bonevich, A. Talin, and A.V. Davydov, Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth, Appl. Phys. Lett., 2012, v. 101, 241119
  57. X-H. Liu, J-W. Wang, S. Huang, F. Fan, X. Huang, Y. Liu, S. Krylyuk, J. Yoo, S.A. Dayeh, A.V. Davydov, S.X. Mao, S.T. Picraux, S. Zhang, J. Li, T. Zhu, and J.Y. Huang. In situ atomic-scale imaging of electrochemical lithiation in silicon, Nature Nanotechnology, 2012, v. 7, 749
  58. D. Ruzmetov, V.P. Oleshko, P.M. Haney, H.J. Lezec, K. Karki, K.H. Baloch, A.K. Agrawal, A.V. Davydov, S. Krylyuk, Y. Liu, J.Y. Huang, M. Tanase, J. Cumings, and A.A. Talin, Electrolyte Stability Determines Scaling Limits for Solid-State 3D Li-ion Batteries, Nanoletters, 2012, v. 12, 505
  59. D. Paramanik, A. Motayed, G.S. Aluri, J.-Y. Ha, S. Krylyuk, A.V. Davydov, M. King, S. McLaughlin, S. Gupta, and H. Cramer, Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme, J. Vac. Sci. Technol. B, 2012, v. 30, 05220
  60. G. Jacopin, L Rigutti, S. Bellei, P. Lavenus, F.H. Julien, A.V. Davydov, D. Tsvetkov, K.A. Bertness, N.A. Sanford, J.B. Schlager, and M. Tchernycheva, Photoluminescence polarization in
  61. strained GaN/AlGaN core/shell nanowires, Nanotechnology, 2012, v. 23, 325701
  62. R. Bajpai, A. Motayed, A.V. Davydov, K.A. Bertness, and M.E. Zaghloul, UV-Assisted Alcohol Sensing with ZnO-functionalized GaN Nanowires, IEEE Electron Dev. Lett., 2012, v. 33, 1075
  63. R. Bajpai, A. Motayed, A.V. Davydov, V.P. Oleshko, G.S. Aluri, K.A. Bertness, M.V. Rao, and M.E. Zaghloul, UV-assisted alcohol sensing using SnO2 functionalized GaN nanowire devices, Sensors and Actuators B, (2012), v. 171-172, 499
  64. G.S. Aluri, A. Motayed, A.V. Davydov, V.P. Oleshko, K.A. Bertness, N.A. Sanford and R.V. Mulpuri, Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO2�Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors, Nanotechnology, 2012, v. 23, 175501
  65. E.N. Dattoli, A.V. Davydov, and K.D. Benkstein, Tin oxide nanowire sensor with integrated temperature and gate control for multi-gas recognition, Nanoscale, 2012, v. 4, 1760
  66. G. Stan, S. Krylyuk, A. V. Davydov, I. Levin, and R. F. Cook, Ultimate Bending Strength of Si Nanowires, Nanoletters, 2012, v. 12, 2599
  67. E.H. Williams, J.A. Schreifels, M.V. Rao, A.V. Davydov,  V.P. Oleshko, N.J. Lin, K.L. Steffens, S. Krylyuk, K.A. Bertness, A.K. Manocchi, and Y. Koshka, Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications, Journal of Materials Research, 2012, v. 28, 68
  68. E.H. Williams, A.V. Davydov, A. Motayed, S.G. Sundaresan, P. Bocchini, L.J. Richter, G. Stan, K. Steffens, R. Zangmeister, J.A. Schreifels, M.V. Rao, Immobilization of streptavidin on 4H�SiC for biosensor development, Applied Surface Science, 2012, v. 258, 6056
  69. G. Stan, S. Krylyuk, A.V. Davydov, and R.F. Cook, Bending manipulation and measurements of fracture strength of silicon and oxidized silicon nanowires by atomic force microscopy, J. Mater. Res., 2012, v. 27, 562
  70. R. Venkatesh K.G. Thirumalai, B. Krishnan, A.V. Davydov, J.N. Merrett, and Y. Koshka, Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires, Crystal Growth & Design, 2012, v. 12, 2221
  71. R. Venkatesh K.G. Thirumalai, B. Krishnan, I. Levin, A.V. Davydov, S. Sundaresan, J.N. Merrett, and Y. Koshka, Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates, Materials Science Forum, v. 717-720 (2012) p. 1279
  72. A. Motayed, S. Krylyuk and A.V. Davydov, Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy, Appl. Phys. Lett., 2011, v. 99, 113107
  73. K.A. Bertness, N.A. Sanford and A.V. Davydov, GaN Nanowires Grown by Molecular Beam Epitaxy, IEEE J. Selected Topics in Quantum Electronics, 2011, v. 17, 847
  74. G.S. Aluri, A. Motayed, A.V. Davydov, V.P. Oleshko, K.A. Bertness, N.A. Sanford and M.V. Rao, Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants, Nanotechnology, 2011, v. 22, 295503
  75. A. Sanders, P. Blanchard, K. Bertness, M. Brubaker, C. Dodson, T. Harvey, A. Herrero, D. Rourke, J. Schlager, N. Sanford, A.N. Chiaramonti, A.V. Davydov, A. Motayed and D. Tsvetkov,  Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires, Nanotechnology, 2011, v. 22, 465703
  76. M.D. Brubaker, Igor Levin, A.V. Davydov, D.M. Rourke, N.A. Sanford, V.M. Bright and K.A. Bertness, Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy, J. Appl. Phys., 2011, v. 110, 053506
  77. J.Y. Ha, B.D. Sosnowchik, L. Lin, D.H. Kang, and A.V. Davydov, Patterned Growth of TiO2 Nanowires on Titanium Substrates, Applied Physics Express, 2011, v.4, 065002
  78. E. Strelcov, A.V. Davydov, U. Lanke, C. Watts, and A. Kolmakov, In Situ Monitoring of the Growth, Intermediate Phase Transformations and Templating of Single Crystal VO2 Nanowires and Nanoplatelets, ACS Nano, 2011, v. 5, 3373
  79. S. Krylyuk,  A.V. Davydov, and I. Levin, Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure, ACS Nano, 2011, v. 5, 656
  80. A. Motayed, J.E. Bonevich, S. Krylyuk, A.V. Davydov, G. Aluri, and M.V. Rao, Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires, Nanotechnology, 2011, v. 22, 75206
  81. B. Krishnan, R. Venkatesh, K.G. Thirumalai, Y. Koshka, S. Sundaresan, I. Levin,  A.V. Davydov, J.N. Merrett, Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates, Crystal Growth & Design, 2011, v. 11, 538
  82. R.A. Bernal, R. Agrawal, B. Peng, K.A. Bertness, N.A. Sanford, A.V. Davydov, and H.D. Espinosa, Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation, Nanoletters, 2011, v. 11, 548
  83. G. Stan, S. Krylyuk,  A.V. Davydov, and R. F. Cook, Compressive Stress Effect on the Radial Elastic Modulus of Oxidized Si Nanowires, Nanoletters, 2010, v. 10, 2031
  84. S. Krylyuk, A.V. Davydov, I. Levin, A. Motayed, and M.D. Vaudin, Rapid thermal oxidation of silicon nanowires, Applied Physics Letters, 2009, 94, 63113
  85. A. Motayed and A.V. Davydov, GaN-nanowire/amorphous-Si core-shell heterojunction diodes, Applied Physics Letters, 2008, v. 93, 193102
  86. A. Motayed, A.V. Davydov, S. N. Mohammad, and J. Melngailis, Experimental investigation of electron transport properties of gallium nitride nanowires, Journal of Applied Physics, 2008, v. 104, 24302
  87. S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, A. Motayed, A.V. Davydov, Low-frequency noise in GaN nanowire transistors, Journal of Applied Physics, 2008, v. 103, 064501
  88. D.H. Hill, R.A. Bartynski, N.V. Nguyen, A.V. Davydov, D.C. Horowitz, and M.M. Frank,  The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films, Journal of Applied Physics, 2008, v. 103, 093712
  89. G. Stan, S. Krylyuk, A.V. Davydov, M. Vaudin, L.A. Bendersky, and R.F. Cook, Surface effects on the elastic modulus of Te nanowires, Applied Physics Letters, 2008, v. 92, 241908
  90. A.L. Syrkin, V. Ivantsov, A. Usikov, V.A. Dmitriev, G. Chambard, P. Ruterana, A.V. Davydov, S.G. Sundaresan, E. Lutsenko, A.V. Mudryi, E.D. Readinger, G.D. Chern-Metcalfe, and M. Wraback, InN layers grown by the HVPE, Physica Status Solidi C, 2008, v. 5, 1792
  91. A. Usikov, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Syrkin, V. Dmitriev, A.Yu. Nikiforov, S. G. Sundaresan, S.J. Jeliazkov, and A.V. Davydov, Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE, Physica Status Solidi C, 2008, v. 5, 1829
  92. A.Yu. Zavrazhnov, I.D. Zartsyn, A.V. Naumov, V.P. Zlomanov and A.V. Davydov, Composition Control of Low-Volatility Solids Through Chemical Vapor Transport Reactions. I. Theory of Selective Chemical Vapor Transport, Journal of Phase Equilibria and Diffusion, 2007, v. 28, 510
  93. S.G. Sundaresan, A.V. Davydov, M.D. Vaudin, I. Levin, J.E. Maslar, Y-L. Tian, and M.V. Rao,  Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts, Chemistry of Materials, 2007, v. 19, 5531
  94.   A. Motayed, A.V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes, Appl. Phys. Lett., 2007, v. 90, 183120
  95. S.G. Sundaresan, M.V. Rao, Y-L. Tian, J.A. Schreifels, M.C. Wood, K.A. Jones, and A.V. Davydov, Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC, J. of Electronic Materials, 2007, v. 36, 324
  96. O. Kryliouk, H.J. Park, Y.S. Won, T. Anderson, A.V. Davydov, I. Levin, J.H. Kim, and J.A. Freitas,  Controlled synthesis of single-crystalline InN nanorods,  Nanotechnology, 2007, v. 18, 135606
  97. A. Motayed, M. Vaudin, A.V. Davydov, J. Melngailis, M. He, and S. N. Mohammad, Diameter dependent transport properties of gallium nitride nanowire field effect transistors, Appl. Phys. Lett., 2007, v. 90, 043104
  98. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Simple model for dielectrophoretic alignment of gallium nitride nanowires, J. Vac. Sci. Technol.,  2007, v. 25B, 120
  99. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique, - J. Appl. Phys., 2006, v. 100, 114310
  100. N. Mahadik, M.V. Rao, and A.V. Davydov, Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN, - J. Electronic Materials, 2006, v. 35, 2035
  101.  A. Motayed, A.V. Davydov, M.D. Vaudin, I. Levin. J. Melngailis, and S. N. Mohammad, Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition, - J. Appl. Phys., 2006, v. 100, 024306 
  102. K.A. Bertness, A. Roshko, N.A. Sanford, J.M. Barker, A.V. Davydov, Spontaneously grown GaN and AlGaN nanowires, - J. Cryst. Growth, 2006, v. 287, 522
  103. K.A. Bertness, N.A. Sanford, J.M. Barker, J.B. Schlager, A. Roshko, A.V. Davydov, I. Levin, Catalyst-free growth of GaN nanowires,-  J. of Electronic Materials, 2006, v. 35,  576
  104. J.E. Van Nostrand, K.L. Averett, R. Cortez, J. Boeckl, C.E. Stutz, N.A. Sanford, A.V. Davydov, J.D. Albrecht, Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns, - J. of Crystal Growth, 2006, v. 287, 500
  105. A.V. Davydov, A. Motayed, W.J. Boettinger, R.S. Gates, Q. Z. Xue, H. C. Lee, Y. K. Yoo, Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN, Phys. Stat. Sol. C, 2005, v. 2, p. 2551
  106. I. Levin, A.V. Davydov, B. Nikoobakht, and N. Sanford, Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates, - Appl. Phys. Letters, 2005, v. 87, 103110
  107. N. V. Nguyen, A.V. Davydov, and D. Chandler-Horowitz, Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, - Appl. Phys. Letters, 2005, v. 87, 192903
  108. M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A. Davydov, A.J. Shapiro, Influence of polarity on GaN thermal stability, - J. Cryst. Growth, 2005, v. 274(1-2), 38
  109. N.A. Sanford, A.V. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park and J.Y. Han, R.J. Molnar, Measurement of Second Order Susceptibilities of GaN and AlGaN, J. Appl. Phys., 2005, v.97, p. 053512
  110. A. Motayed, A.V. Davydov, W. J. Boettinger, D. Josell, A.J. Shapiro, I. Levin, T. Zheleva, G.L. Harris, Realization of improved metallization-Ti/Al/Ti/W/Au Ohmic contacts to n-GaN for high-temperature application, Phys. Stat. Sol. C, 2005, v. 2, p. 2536
  111. N.A. Sanford, L.H. Robins, M.H. Gray, J.E. Van Nostrand, C. Stutz, R. Cortez, A.V. Davydov, A. Shapiro, I. Levin, and A. Roshko, Fabrication and analysis of GaN nanorods grown by MBE, Phys. Stat. Sol. C, 2005, v. 2, p. 2357
  112. N.A. Sanford, A. Munkholm, M.R. Krames, A. Shapiro, I. Levin, A.V. Davydov, S. Sayan, L.S. Wielunski, and T.E. Madey, Refractive index and birefringence of InGaN films grown by MOCVD, Phys. Stat. Sol. C, 2005, v. 2, p. 2783
  113. A.V. Davydov, L.A. Bendersky, W.J. Boettinger, D. Josell, M.D. Vaudin, K.-S. Chang c and  I. Takeuchi, Combinatorial Investigation of Structural Quality of Au/Ni Contacts on GaN,  Appl. Surf. Science, 2004, v. 223(1-3), p. 24;
  114. P. Schenck, D.L. Kaiser, A.V. Davydov, High-Throughput Characterization of the Optical Properties of Compositionally Graded Combinatorial Films, -Appl. Surf. Science, 2004, v. 223(1-3), p. 200
  115. B. Nikoobakht, A. Davydov, and S.J. Stranick, Controlling the Growth Direction of ZnO Nanowires on c-Plane Sapphire, in: �Nanoparticles and Nanowire Building Blocks�Synthesis, Processing, Characterization and Theory�, MRS Symp. Proc. 818, Warrendale, PA, 2004, M8.25.1
  116. A. Motayed, K.A. Jones, M.A. Derenge, M.C. Wood, D. N. Zakharov, Z. Liliental-Weber, D.J. Smith, A.V. Davydov, W.T. Anderson, A.A. Iliadis, and S. Noor Mohammad, Electrical, Microstructural and Thermal Stability Characteristics of Ta/Ti/Ni/Au Contacts to n-GaN, � J. Appl. Phys., 2004, v. 95(3), p. 1516
  117. D.B. Migas, L. Miglio, M. Rebien, W. Henrion, P. Stauss, A.G. Birdwell, A.V. Davydov, V.L. Shaposhnikov, and V.E. Borisenko, Structural, electronic, and optical properties of beta-(Fe1-xCox)Si2, - Physical Review B, 2004, v. 69, p. 115204 
  118. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars, Comparative Studies of Refractive Index for MOCVD and HVPE AlxGa1-xN films Grown on Sapphire Substrates, � J. Appl. Phys., 2003, v. 94(5), p. 2980
  119. A.V. Davydov and U.R. Kattner, Revised Thermodynamic Description of the Co-Mo System, � Journal of Phase Equilibria, 2003, v. 24(3), p. 209
  120. C.J. Lu, A.V. Davydov, D. Josell, and L.A. Bendersky, Interfacial reactions of Ti/n-GaN contacts at elevated temperature, � J. Appl. Phys., 2003, v. 94, p. 245
  121. J. Unland, B. Onderka, A. Davydov, R. Schmid-Fetzer, Thermodynamics and Phase Stability in the Ga-N System, � J. Cryst. Growth, 2003, v. 256, p. 33
  122. V.P. Zlomanov, A.J. Zavrazhnov, A.V. Davydov, Non-stoichiometry and P-T-x Diagrams of Binary Systems, - Intermetallics, 2003, v.11, p. 1287
  123. A. Motayed, A.V. Davydov, L.A. Bendersky, M.C. Wood, M.A. Derenge, D.F. Wang, K.A. Jones, and S.N. Mohammad, Novel high-transparency Ni/Au bilayer contacts to n-type GaN, - J. Appl. Phys., 2002, v.92, p. 5218
  124. A.V. Davydov, W.J. Boettinger, U.R. Kattner and T.J. Anderson, Thermodynamic Assessment of the Gallium-Nitrogen System, - Phys. Stat. Sol. A, 2001, v. 188, p. 407
  125. M.A. Mastro, O.M. Kryliouk, M.D. Reed, T.J. Anderson, A. Davydov, A.J. Shapiro, Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2, - Phys. Stat. Sol. A, 2001, v. 188, p. 467
  126. V. Soukhoveev, V. Ivantsov, Yu. Melnik, A. Davydov, D. Tsvetkov, K. Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, V. Dmitriev, Characterization of 2.5� Diameter Bulk GaN Grown from Melt-Solution, - Phys. Stat. Sol. A, 2001, v. 188, p. 411
  127. D. Tsvetkov, Yu. Melnik, A. Davydov, A. Shapiro, O. Kovalenkov, J.B. Lam, J.J. Song, V. Dmitriev, Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by HVPE, - Phys. Stat. Sol. A, 2001, v. 188, p. 429
  128. A.V. Davydov, U.R. Kattner, D. Josell, J.E. Blendell, R.M. Waterstrat, A.J. Shapiro, and W.J. Boettinger, Determination of the CoTi Congruent Melting Point and Thermodynamic Re-assessment of the Co-Ti System, - Metall. & Mater. Trans. A., v. 32A, 2001, p. 2175
  129. M. Ahonen, B. Liu, A. Davydov, E. Ristolainen, P. Holloway, Interfacial Reactions Between Metals and Gallium Nitride. � in: �31st State-of-the-Art Program on Compound Semiconductors�  Ed. D.N. Buckley, S.N.G. Chu, and F. Ren, ECS Proceedings, 1999, v. 99-17, p.114
  130. A. Davydov, U.R. Kattner, Thermodynamic Assessment of the Co-Mo System. � Journal of Phase Equilibria, 1999, v. 20(1), p. 5
  131. A. Davydov, T.J. Anderson, Thermodynamic Analysis of the Ga-N System. � In: �III-V Nitride Materials and Processes III� Ed. T.D. Moustakas et al.,  ECS Proceedings, 1998, v. 98-18, p. 38
  132. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Comparison of plasma chemistries for dry etching thin film electroluminescent display materials. - J. Vacuum Sci. Technology A, 1998, v. 16(4), p. 2177
  133. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays. � J. Vacuum Sci. Technology A, 1998, v. 16(3), p.1944
  134. C.-H. Chang, B.J. Stanbery, A. Morrone, A. Davydov, T.J. Anderson, Novel multilayer process for CuInSe2 thin film formation by rapid thermal processing. � In:  �Thin-film structures for photovoltaics� (MRS, Boston, 1997). MRS Symposium Proceedings, 1998, v. 485, p. 163
  135. B.J. Stanbery, A. Davydov, C.H. Chang, T.J. Anderson, Reaction engineering and precursor film deposition for CuInSe2 synthesis. - 14th  NREL/SNL Photovoltaic Program Review Meeting, Lakewood, CO, 1996.-In AIP Conference Proceedings: Photovoltaic Advanced Research and Development Project (AIP, NY, 1997),  v. 394, p.579
  136. H. P. Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J.E. Yu, B. Pathangey, K.S. Jones and T.J. Anderson, Carrier confinement effects in epitaxial silicon quantum wells prepared by MOCVD. -In: �Microcrystalline and nanocrystalline semiconductors� (MRS, Pittsburgh, 1995), MRS Symposium Proceedings, v. 358, p.987
  137. E. Bretschneider, A. Davydov, C. McCreary, , Li Wang, T.J. Anderson, H.P. Maruska, P. Norris, I. Goepfert, T.D. Moustakas, ZnS/Si/ZnS quantum well structures for visible light emission. -In: �Surface/interface and stress effects in electronic material nanocrystals�, (MRS, Pittsburgh, 1996), MRS  Symposium Proceedings, v. 405, p.295
  138. C.H. Chang, A. Davydov, B.J. Stanbery, T.J. Anderson, Thermodynamic assessment of the Cu-In-Se system and application to thin film photovoltaics. - 25th IEEE Photovoltaic Specialist Conference, Washington, DC, 1996. Proceedings, p.849
  139. A.V. Davydov, M.H. Rand and B.B. Argent, Review of heat capacity data for tellurium. -CALPHAD, 1995, v.19(3). p.375
  140. A.V. Davydov, V.P. Zlomanov, Optimization of the thermodynamic properties and phase diagram of the Ga-As system.- Inorg. Materials, 1994, v.30(3), p. 309
  141. B.A. Akimov, A.V. Albul, A.V. Davydov, V.P. Zlomanov, L.I. Ryabova, M.E. Tamm, Pressure Sensor.- SU Patent No 1527524 A1 (1989)
  142. A.V. Davydov, M.E. Tamm, V.P. Zlomanov, Phase equilibria in the thallium selenide-indium selenide system.  � Russ. J. Inorg. Chem., 1988, v.33(7), p.1067
  143. A.V. Davydov, M.E. Tamm, V.P. Zlomanov, Solid solutions in the InTe-TlTe  system. � Russ. J. Inorg. Chem.,1987, v. 32(7), p.1055
  144. N.Yu. Artyushina, A.V. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Modulation of the energy band relief of single crystal 2PbTe-TlBiTe2 alloys. -Sov. Phys. Semicond., 1986, v.20(2), p.158
  145. B.A. Akimov, A.B. Albul, A.V. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Transport effects and percolation conduction in the In1-xTlxTe solid solutions.-Sov. Physics - Solid State, 1986, v. 28(9), p.1502


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