RECORD of GRANTS and COTRACTS (past 14 years):
   

1.    "Growth and metallization of semiconductor nanowires for electronics and optoelectronics". PI (Sponsor: NIST, 2004 - present )
2.    "Combinatorial development of electrical contacts to n- and p-GaN semiconductor". Co-PI (Sponsor: NIST/University of Maryland, 2003-2004)
3.    "Metallurgy of the electrical contacts to wide-band-gap semiconductors". Co-PI (Sponsor: NIST/University of Maryland, 2000-2003)
4.    "Evaluation of phase diagrams for selected electronic materials and metal alloys". Co-PI (Sponsor: NIST/University of Florida, 1999/00)
5.    "Thermodynamic evaluation and calculation of phase diagrams for Co-Mo and selected Ni-based alloys". (Sponsor: NIST/University of Florida, 1997/99)
6.    "Bulk crystal growth and epitaxy of compound semiconductors for visible light emitters".  (Sponsor: NRC/COBASE, 1995/96)
7.    "Assessment of the thermochemistry and phase diagrams for selected wide band gap compound semiconductors". (Sponsor: Stand. Reference Data Program, NIST, 1994/95)

  

SELECTED PUBLICATIONS:

  1. S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, A. Motayed, A.V. Davydov, Low-frequency noise in GaN nanowire transistors, Journal of Applied Physics, 2008, v. 103, 064501

  2. D.H. Hill, R.A. Bartynski, N.V. Nguyen, A.V. Davydov, D.C. Horowitz, and M.M. Frank,  The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films, Journal of Applied Physics, 2008, v. 103, 093712
  3. G. Stan, S. Krylyuk, A.V. Davydov, M. Vaudin, L.A. Bendersky, and R.F. Cook, Surface effects on the elastic modulus of Te nanowires, Applied Physics Letters, 2008, v. 92, 241908
  4. A.L. Syrkin, V. Ivantsov, A. Usikov, V.A. Dmitriev, G. Chambard, P. Ruterana, A.V. Davydov, S.G. Sundaresan, E. Lutsenko, A.V. Mudryi, E.D. Readinger, G.D. Chern-Metcalfe, and M. Wraback, InN layers grown by the HVPE, Physica Status Solidi C, 2008, v. 5, 1792
  5. A. Usikov, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Syrkin, V. Dmitriev, A.Yu. Nikiforov, S. G. Sundaresan, S.J. Jeliazkov, and A.V. Davydov, Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE, Physica Status Solidi C, 2008, v. 5, 1829
  6. A.Yu. Zavrazhnov, I.D. Zartsyn, A.V. Naumov, V.P. Zlomanov and A.V. Davydov, Composition Control of Low-Volatility Solids Through Chemical Vapor Transport Reactions. I. Theory of Selective Chemical Vapor Transport, Journal of Phase Equilibria and Diffusion, 2007, v. 28, 510
  7. S.G. Sundaresan, A.V. Davydov, M.D. Vaudin, I. Levin, J.E. Maslar, Y-L. Tian, and M.V. Rao,  Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts, Chemistry of Materials, 2007, v. 19, 5531
  8.   A. Motayed, A.V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes, Appl. Phys. Lett., 2007, v. 90, 183120
  9. S.G. Sundaresan, M.V. Rao, Y-L. Tian, J.A. Schreifels, M.C. Wood, K.A. Jones, and A.V. Davydov, Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC, J. of Electronic Materials, 2007, v. 36, 324
  10. O. Kryliouk, H.J. Park, Y.S. Won, T. Anderson, A.V. Davydov, I. Levin, J.H. Kim, and J.A. Freitas,  Controlled synthesis of single-crystalline InN nanorods,  Nanotechnology, 2007, v. 18, 135606
  11. A. Motayed, M. Vaudin, A.V. Davydov, J. Melngailis, M. He, and S. N. Mohammad, Diameter dependent transport properties of gallium nitride nanowire field effect transistors, Appl. Phys. Lett., 2007, v. 90, 043104
  12. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Simple model for dielectrophoretic alignment of gallium nitride nanowires, J. Vac. Sci. Technol.,  2007, v. 25B, 120
  13. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique, - J. Appl. Phys., 2006, v. 100, 114310
  14. N. Mahadik, M.V. Rao, and A.V. Davydov, Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN, - J. Electronic Materials, 2006, v. 35, 2035
  15.  A. Motayed, A.V. Davydov, M.D. Vaudin, I. Levin. J. Melngailis, and S. N. Mohammad, Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition, - J. Appl. Phys., 2006, v. 100, 024306 
  16. K.A. Bertness, A. Roshko, N.A. Sanford, J.M. Barker, A.V. Davydov, Spontaneously grown GaN and AlGaN nanowires, - J. Cryst. Growth, 2006, v. 287, 522
  17. K.A. Bertness, N.A. Sanford, J.M. Barker, J.B. Schlager, A. Roshko, A.V. Davydov, I. Levin, Catalyst-free growth of GaN nanowires,-  J. of Electronic Materials, 2006, v. 35,  576
  18. J.E. Van Nostrand, K.L. Averett, R. Cortez, J. Boeckl, C.E. Stutz, N.A. Sanford, A.V. Davydov, J.D. Albrecht, Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns, - J. of Crystal Growth, 2006, v. 287, 500
  19. A.V. Davydov, A. Motayed, W.J. Boettinger, R.S. Gates, Q. Z. Xue, H. C. Lee, Y. K. Yoo, Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN, Phys. Stat. Sol. C, 2005, v. 2, p. 2551
  20. I. Levin, A.V. Davydov, B. Nikoobakht, and N. Sanford, Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates, - Appl. Phys. Letters, 2005, v. 87, 103110
  21. N. V. Nguyen, A.V. Davydov, and D. Chandler-Horowitz, Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, - Appl. Phys. Letters, 2005, v. 87, 192903
  22. M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A. Davydov, A.J. Shapiro, Influence of polarity on GaN thermal stability, - J. Cryst. Growth, 2005, v. 274(1-2), 38
  23. N.A. Sanford, A.V. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park and J.Y. Han, R.J. Molnar, Measurement of Second Order Susceptibilities of GaN and AlGaN, J. Appl. Phys., 2005, v.97, p. 053512
  24. A. Motayed, A.V. Davydov, W. J. Boettinger, D. Josell, A.J. Shapiro, I. Levin, T. Zheleva, G.L. Harris, Realization of improved metallization-Ti/Al/Ti/W/Au Ohmic contacts to n-GaN for high-temperature application, Phys. Stat. Sol. C, 2005, v. 2, p. 2536
  25. N.A. Sanford, L.H. Robins, M.H. Gray, J.E. Van Nostrand, C. Stutz, R. Cortez, A.V. Davydov, A. Shapiro, I. Levin, and A. Roshko, Fabrication and analysis of GaN nanorods grown by MBE, Phys. Stat. Sol. C, 2005, v. 2, p. 2357
  26. N.A. Sanford, A. Munkholm, M.R. Krames, A. Shapiro, I. Levin, A.V. Davydov, S. Sayan, L.S. Wielunski, and T.E. Madey, Refractive index and birefringence of InGaN films grown by MOCVD, Phys. Stat. Sol. C, 2005, v. 2, p. 2783
  27. A.V. Davydov, L.A. Bendersky, W.J. Boettinger, D. Josell, M.D. Vaudin, K.-S. Chang c and  I. Takeuchi, Combinatorial Investigation of Structural Quality of Au/Ni Contacts on GaN,  Appl. Surf. Science, 2004, v. 223(1-3), p. 24;
  28. P. Schenck, D.L. Kaiser, A.V. Davydov, High-Throughput Characterization of the Optical Properties of Compositionally Graded Combinatorial Films, -Appl. Surf. Science, 2004, v. 223(1-3), p. 200
  29. B. Nikoobakht, A. Davydov, and S.J. Stranick, Controlling the Growth Direction of ZnO Nanowires on c-Plane Sapphire, in: “Nanoparticles and Nanowire Building Blocks—Synthesis, Processing, Characterization and Theory”, MRS Symp. Proc. 818, Warrendale, PA, 2004, M8.25.1
  30. A. Motayed, K.A. Jones, M.A. Derenge, M.C. Wood, D. N. Zakharov, Z. Liliental-Weber, D.J. Smith, A.V. Davydov, W.T. Anderson, A.A. Iliadis, and S. Noor Mohammad, Electrical, Microstructural and Thermal Stability Characteristics of Ta/Ti/Ni/Au Contacts to n-GaN, – J. Appl. Phys., 2004, v. 95(3), p. 1516
  31. D.B. Migas, L. Miglio, M. Rebien, W. Henrion, P. Stauss, A.G. Birdwell, A.V. Davydov, V.L. Shaposhnikov, and V.E. Borisenko, Structural, electronic, and optical properties of beta-(Fe1-xCox)Si2, - Physical Review B, 2004, v. 69, p. 115204 
  32. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars, Comparative Studies of Refractive Index for MOCVD and HVPE AlxGa1-xN films Grown on Sapphire Substrates, – J. Appl. Phys., 2003, v. 94(5), p. 2980
  33. A.V. Davydov and U.R. Kattner, Revised Thermodynamic Description of the Co-Mo System, – Journal of Phase Equilibria, 2003, v. 24(3), p. 209
  34. C.J. Lu, A.V. Davydov, D. Josell, and L.A. Bendersky, Interfacial reactions of Ti/n-GaN contacts at elevated temperature, – J. Appl. Phys., 2003, v. 94, p. 245
  35. J. Unland, B. Onderka, A. Davydov, R. Schmid-Fetzer, Thermodynamics and Phase Stability in the Ga-N System, – J. Cryst. Growth, 2003, v. 256, p. 33
  36. V.P. Zlomanov, A.J. Zavrazhnov, A.V. Davydov, Non-stoichiometry and P-T-x Diagrams of Binary Systems, - Intermetallics, 2003, v.11, p. 1287
  37. A. Motayed, A.V. Davydov, L.A. Bendersky, M.C. Wood, M.A. Derenge, D.F. Wang, K.A. Jones, and S.N. Mohammad, Novel high-transparency Ni/Au bilayer contacts to n-type GaN, - J. Appl. Phys., 2002, v.92, p. 5218
  38. A.V. Davydov, W.J. Boettinger, U.R. Kattner and T.J. Anderson, Thermodynamic Assessment of the Gallium-Nitrogen System, - Phys. Stat. Sol. A, 2001, v. 188, p. 407
  39. M.A. Mastro, O.M. Kryliouk, M.D. Reed, T.J. Anderson, A. Davydov, A.J. Shapiro, Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2, - Phys. Stat. Sol. A, 2001, v. 188, p. 467
  40. V. Soukhoveev, V. Ivantsov, Yu. Melnik, A. Davydov, D. Tsvetkov, K. Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, V. Dmitriev, Characterization of 2.5” Diameter Bulk GaN Grown from Melt-Solution, - Phys. Stat. Sol. A, 2001, v. 188, p. 411
  41. D. Tsvetkov, Yu. Melnik, A. Davydov, A. Shapiro, O. Kovalenkov, J.B. Lam, J.J. Song, V. Dmitriev, Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by HVPE, - Phys. Stat. Sol. A, 2001, v. 188, p. 429
  42. A.V. Davydov, U.R. Kattner, D. Josell, J.E. Blendell, R.M. Waterstrat, A.J. Shapiro, and W.J. Boettinger, Determination of the CoTi Congruent Melting Point and Thermodynamic Re-assessment of the Co-Ti System, - Metall. & Mater. Trans. A., v. 32A, 2001, p. 2175
  43. M. Ahonen, B. Liu, A. Davydov, E. Ristolainen, P. Holloway, Interfacial Reactions Between Metals and Gallium Nitride. – in: “31st State-of-the-Art Program on Compound Semiconductors”  Ed. D.N. Buckley, S.N.G. Chu, and F. Ren, ECS Proceedings, 1999, v. 99-17, p.114
  44. A. Davydov, U.R. Kattner, Thermodynamic Assessment of the Co-Mo System. – Journal of Phase Equilibria, 1999, v. 20(1), p. 5
  45. A. Davydov, T.J. Anderson, Thermodynamic Analysis of the Ga-N System. – In: “III-V Nitride Materials and Processes III“ Ed. T.D. Moustakas et al.,  ECS Proceedings, 1998, v. 98-18, p. 38
  46. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Comparison of plasma chemistries for dry etching thin film electroluminescent display materials. - J. Vacuum Sci. Technology A, 1998, v. 16(4), p. 2177
  47. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays. – J. Vacuum Sci. Technology A, 1998, v. 16(3), p.1944
  48. C.-H. Chang, B.J. Stanbery, A. Morrone, A. Davydov, T.J. Anderson, Novel multilayer process for CuInSe2 thin film formation by rapid thermal processing. – In:  “Thin-film structures for photovoltaics” (MRS, Boston, 1997). MRS Symposium Proceedings, 1998, v. 485, p. 163
  49. B.J. Stanbery, A. Davydov, C.H. Chang, T.J. Anderson, Reaction engineering and precursor film deposition for CuInSe2 synthesis. - 14th  NREL/SNL Photovoltaic Program Review Meeting, Lakewood, CO, 1996.-In AIP Conference Proceedings: Photovoltaic Advanced Research and Development Project (AIP, NY, 1997),  v. 394, p.579
  50. H. P. Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J.E. Yu, B. Pathangey, K.S. Jones and T.J. Anderson, Carrier confinement effects in epitaxial silicon quantum wells prepared by MOCVD. -In: “Microcrystalline and nanocrystalline semiconductors” (MRS, Pittsburgh, 1995), MRS Symposium Proceedings, v. 358, p.987
  51. E. Bretschneider, A. Davydov, C. McCreary, , Li Wang, T.J. Anderson, H.P. Maruska, P. Norris, I. Goepfert, T.D. Moustakas, ZnS/Si/ZnS quantum well structures for visible light emission. -In: “Surface/interface and stress effects in electronic material nanocrystals”, (MRS, Pittsburgh, 1996), MRS  Symposium Proceedings, v. 405, p.295
  52. C.H. Chang, A. Davydov, B.J. Stanbery, T.J. Anderson, Thermodynamic assessment of the Cu-In-Se system and application to thin film photovoltaics. - 25th IEEE Photovoltaic Specialist Conference, Washington, DC, 1996. Proceedings, p.849
  53. A.V. Davydov, M.H. Rand and B.B. Argent, Review of heat capacity data for tellurium. -CALPHAD, 1995, v.19(3). p.375
  54. A.V. Davydov, V.P. Zlomanov, Optimization of the thermodynamic properties and phase diagram of the Ga-As system.- Inorg. Materials, 1994, v.30(3), p. 309
  55. B.A. Akimov, A.V. Albul, A.V. Davydov, V.P. Zlomanov, L.I. Ryabova, M.E. Tamm, Pressure Sensor.- SU Patent No 1527524 A1 (1989)
  56. A.V. Davydov, M.E. Tamm, V.P. Zlomanov, Phase equilibria in the thallium selenide-indium selenide system.  – Russ. J. Inorg. Chem., 1988, v.33(7), p.1067
  57. A.V. Davydov, M.E. Tamm, V.P. Zlomanov, Solid solutions in the InTe-TlTe  system. – Russ. J. Inorg. Chem.,1987, v. 32(7), p.1055
  58. N.Yu. Artyushina, A.V. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Modulation of the energy band relief of single crystal 2PbTe-TlBiTe2 alloys. -Sov. Phys. Semicond., 1986, v.20(2), p.158
  59. B.A. Akimov, A.B. Albul, A.V. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Transport effects and percolation conduction in the In1-xTlxTe solid solutions.-Sov. Physics - Solid State, 1986, v. 28(9), p.1502

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