× Updated! Potentials that share interactions are now listed as related models.
 
Citation: R.S. Elliott, and A. Akerson (2015), "Efficient "universal" shifted Lennard-Jones model for all KIM API supported species".

Notes: This is the Se interaction from the "Universal" parameterization for the openKIM LennardJones612 model driver.The parameterization uses a shifted cutoff so that all interactions have a continuous energy function at the cutoff radius. This model was automatically fit using Lorentz-Berthelotmixing rules. It reproduces the dimer equilibrium separation (covalent radii) and the bond dissociation energies. It has not been fitted to other physical properties and its ability to model structures other than dimers is unknown. See the README and params files on the KIM model page for more details.

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Notes: Listing found at https://openkim.org.
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Citation: X.W. Zhou, D.K. Ward, J.E. Martin, F.B. van Swol, J.L. Cruz-Campa, and D. Zubia (2013), "Stillinger-Weber potential for the II-VI elements Zn-Cd-Hg-S-Se-Te", Physical Review B, 88(8), 085309. DOI: 10.1103/physrevb.88.085309.
Abstract: Bulk and multilayered thin film crystals of II-VI semiconductor compounds are the leading materials for infrared sensing, γ-ray detection, photovoltaics, and quantum dot lighting applications. The key to achieving high performance for these applications is reducing crystallographic defects. Unfortunately, past efforts to improve these materials have been prolonged due to a lack of understanding with regards to defect formation and evolution mechanisms. To enable high-fidelity and high-efficiency atomistic simulations of defect mechanisms, this paper develops a Stillinger-Weber interatomic potential database for semiconductor compounds composed of the major II-VI elements Zn, Cd, Hg, S, Se, and Te. The potential's fidelity is achieved by optimizing all the pertinent model parameters, by imposing reasonable energy trends to correctly capture the transformation between elemental, solid solution, and compound phases, and by capturing exactly the experimental cohesive energies, lattice constants, and bulk moduli of all binary compounds. Verification tests indicate that our model correctly predicts crystalline growth of all binary compounds during molecular dynamics simulations of vapor deposition. Two stringent cases convincingly show that our potential is applicable for a variety of compound configurations involving all the six elements considered here. In the first case, we demonstrate a successful molecular dynamics simulation of crystalline growth of an alloyed (Cd0.28Zn0.68Hg0.04) (Te0.20Se0.18S0.62) compound on a ZnS substrate. In the second case, we demonstrate the predictive power of our model on defects, such as misfit dislocations, stacking faults, and subgrain nucleation, using a complex growth simulation of ZnS/CdSe/HgTe multilayers that also contain all the six elements considered here. Using CdTe as a case study, a comprehensive comparison of our potential with literature potentials is also made. Finally, we also propose unique insights for improving the Stillinger-Weber potential in future developments.

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Notes: This file was sent by Dr. Xiaowang Zhou (Sandia National Laboratories) and approved for distribution on 11 Sept. 2013. This file is compatible with LAMMPS and is intended to be used for elements and compounds of the Zn-Cd-Hg-S-Se-Te system (II-VI semiconductors).
File(s):
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Notes: Listing found at https://openkim.org. This KIM potential is based on the files from 2013--Zhou-X-W--Zn-Cd-Hg-S-Se-Te--LAMMPS--ipr1.
Link(s):
 
Citation: X.W. Zhou, M.E. Foster, F.B. van Swol, J.E. Martin, and B.M. Wong (2014), "Analytical Bond-Order Potential for the Cd-Te-Se Ternary System", The Journal of Physical Chemistry C, 118(35), 20661-20679. DOI: 10.1021/jp505915u.
Abstract: CdTe/CdSe core/shell structured quantum dots do not suffer from the defects typically seen in lattice-mismatched films and can therefore lead to improved solid-state lighting devices as compared to the multilayered structures (e.g., InxGa1–xN/GaN). To achieve these devices, however, the quantum dots must be optimized with respect to the structural details at an atomistic level. Molecular dynamics simulations are effective for exploring nano structures at a resolution unattainable by experimental techniques. To enable accurate molecular dynamics simulations of CdTe/CdSe core/shell structures, we have developed a full Cd–Te–Se ternary bond-order potential based on the analytical formalisms derived from quantum mechanical theories by Pettifor et al. A variety of elemental and compound configurations (with coordination varying from 1 to 12) including small clusters, bulk lattices, defects, and surfaces are explicitly considered during potential parametrization. More importantly, enormous iterations are performed to strictly ensure that our potential can simulate the correct crystalline growth of the ground-state structures for Cd, Te, and Se elements as well as CdTe, CdSe, and CdTe1–xSex compounds during molecular dynamics vapor deposition simulations. Extensive test simulation results clearly indicate that our new Cd–Te–Se potential has unique advantages over the existing literature potential involving Cd, Te, and Se elements.

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Notes: This file was taken from the August 22, 2018 LAMMPS distribution and listed as having been created by X.W. Zhou (Sandia)
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Date Created: October 5, 2010 | Last updated: June 09, 2022