Warning! Note that elemental potentials taken from alloy descriptions may not work well for the pure species. This is particularly true if the elements were fit for compounds instead of being optimized separately. As with all interatomic potentials, please check to make sure that the performance is adequate for your problem.
Citation: C. Jiang, D. Morgan, and I. Szlufarska (2012), "Carbon tri-interstitial defect: A model for the DII center", Physical Review B, 86(14), 144118. DOI: 10.1103/physrevb.86.144118.
Abstract: Using a combination of random configuration sampling, molecular dynamics simulated annealing with empirical potential, and ensuing structural refinement by first-principles density functional calculations, we perform an extensive ground-state search for the most stable configurations of small carbon interstitial clusters in SiC. Our search reveals a "magic" cluster number of three atoms, where the formation energy per interstitial shows a distinct minimum. A carbon tri-interstitial cluster with trigonal C3v symmetry is discovered, in which all carbon atoms are fourfold coordinated. In addition to its special thermodynamic stability, its localized vibrational modes are also in a very good agreement with the experimental photoluminescence spectra of the DII center in both 3C- and 4H-SiC. The DII center is one of the most persistent defects in SiC, and we propose that the discovered carbon tri-interstitial is responsible for this center.
See Computed Properties Notes: This file was taken from the August 22, 2018 LAMMPS distribution. It is listed as being contributed by Chao Jiang (University of Wisconsin) File(s):