Albert Davydov
NIST address:
|
Home address:
|
| National Inst. of standards and
Technology |
10901 Stonecutter
Place |
| 100 Bureau Drive, STOP 8555 |
North Potomac, MD 20878 |
| Gaithersburg, MD 20899-8555 |
Phone: (301) 424-2452 |
| Phone: (301) 975-4916 |
e-mail: [email protected] |
| Fax: (301)
975-4553 |
www-page:
www.ctcms.nist.gov/~davydov/ |
| PROFESSIONAL |
A position leading
towards
successful research and development in electronic materials
|
| OBJECTIVE: |
for device
applications
|
QUALIFICATIONS SUMMARY: 20 years experience in synthesis, processing and
characterization of electronic materials. Comprehensive knowledge and
expertise in a) nanowire growth, thin film deposition and bulk crystal
growth
techniques; b) metallization to wide-band-gap semiconductors; c)
structural characterization of
nanowires, films and bulk crystals; d) experimental and computational
study of
phase equilibria. Extensive leadership and communication experience
through professional and extra-curricular activities.
INSTRUMENTATION SKILLS: Growth
systems: MOCVD, Bridgman, e-beam deposition; XRD; SEM; AFM; DTA;
Photolithography;
Electrical characterization: 4-point probe, Hall
PROFESSIONAL
EXPERIENCE:
<> National Institute
of Standards
and Technology:
Materials Research Engineer
(2005
- present)
Guest
Scientist
(1997-2005)
(+ Research Associate at the University of
Maryland)
(2000-2005)
Initiated projects on wide-band-gap compound semiconductors and other
electronic materials:
· Conducted growth, metallization and
characterization of ZnO and GaN nanowires
· Developed combinatorial approach for
optimization of electrical contacts to GaN thin films
· Correlated interfacial reactions in metal
contacts (Ti, Al, Ni, Au) to GaN with bulk diffusion studies and phase
equilibria in the Metal/GaN systems
· <>Evaluated
thermal
stability of gallium nitride thin films in various ambients and
assessed Pressure-Temperature-Composition Phase Diagram of the Ga-N
system
<>· Assessed
crystalline
quality, composition
and strain in MOCVD & HVPE AlxGa1-xN thin
films
· Conducted processing and structural
characterization of Fe1-xCoxSi2, Hf1-xTixO2
and Hf1-xSixO2
thin films
Participated in the development of the thermodynamic database for
commercial superalloys:
· Assessed phase diagrams and thermochemistry
of the Co-Mo and Co-Ti systems
Chemical Engineering Dept.,
University of Florida, Gainesville, FL
Assistant Scientist
(1997-2000)
Postdoctoral Research Associate
(1993-1997)
Conducted research on visible light emitting materials and injection
devices:
· Operated and troubleshooted MOCVD system for
making thin film semiconductors.
· Conducted experiments on: a) MOCVD growth
and characterization of Zn(Mg)S and ZnCdS heterostructures, and quantum
confined Si/ZnS nanostructures for optoelectronic applications, b)
initial deposition studies of Si, ZnS and SrS.
· Conducted project on assessment of
thermochemical and phase diagram data in the III-V, II-VI, and I-III-VI
systems, aimed at optimization of the growth conditions for selected
compound semiconductors, such as GaAs, GaN, ZnS and CuInSe2.
· Trained and coordinated graduate students in
MOCVD growth and phase diagram assessment.
· Assisted in teaching chemical thermodynamics
course for undergraduate students: lecturing and supervising the ASPEN
computer project on VLE equilibria.
Engineering Materials
Dept., University of Sheffield, Sheffield, UK
Invited Researcher (on leave from Moscow State
University)
(1992-1993)
Accomplished Royal Society fellowship program on
thermodynamic evaluation of materials for electronic application:
· Optimized thermodynamic description of the
Zn-Te system and evaluated limiting growth conditions for the ZnTe
compound semiconductor.
· Contributed to calorimetric studies of
selected high-Tc superconductor phases.
Chemistry Dept., University
of Wisconsin, Madison, WI
Visiting Assistant
Professor (on leave from Moscow State University)
(1992)
Developed process for varying electronic properties of
II/VI based chemical sensors by thermal treatment of CdS, CdSe crystals
in a controlled gas atmosphere.
Chemistry Dept., Moscow State
University, Moscow, Russia
Assistant Professor
(1991-1993)
Researcher
(1987-1991)
Conducted research on synthesis and characterization of narrow band gap
semiconductors for optoelectronic applications:
· Synthesized and characterized bulk single
crystals of III-VI and IV-VI materials by liquid-solid and vapor-solid
techniques for use in active elements of IR-detectors.
· Investigated phase equilibria in the
metal-chalcogenide systems: In-Tl-X (X= Se, Te) and Tl-Bi-Te, in search
for new alloy semiconductors with variable band gap.
· Evaluated thermochemistry and phase diagram
data in the metal-chalcogenide systems, directed at optimization of
crystal growth conditions for compound semiconductors.
Teaching: taught general and inorganic chemistry courses for
undergraduate students
EDUCATION:
Ph.D.
Inorganic Chemistry, Moscow State University, Russia
(1989)
M.S.
Chemistry, Moscow State University, Russia
(1984)
HONORS/AWARDS:
Award of International Centre for Diffraction Data
(ICDD)
(2003)
Best Paper Award on ‘Phase Diagram Assessment’ from
APDIC
(2001)
Royal Society Fellowship Award, UK
(1992-1993)
University of Wisconsin Visiting Scholarship, USA
(1992)
Moscow State
University Graduate Scholarship, Russia
(1984-1987)
PROFESSIONAL AFFILIATIONS:
Head of the Semiconductor Task Group for the International Centre
for Diffraction Data (ICDD)
Member: Amer. Assoc. for Crystal Growth; Who’s Who in
Sci.&
Eng.
Reviewer: NSF, CRDF, NCERC (Canada) and peer-reviewed
journals
Co-organizer: XXVI International CALPHAD-‘97 conference
Associate Editor: Journal of Mining and
Metallurgy
OTHER SKILLS:
Fluent in English and Russian languages; knowledge
of the statistical and
specialized scientific (ThermoCalc, MTDATA) software packages
REFERENCES: Upon
request
PUBLICATIONS: see Appendix
attached
You can download
copy of this Resume in Word-format
Updated July 5, 2005
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