JVASP-9418_MnSiN2
JARVIS-ID:JVASP-9418 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:MnSiN2 Formation energy/atom (eV):-0.683 a 5.119 Å α:90.0 ° a 5.119 Å α:90.0 °
Space-group :Pna2_1, 33 Relaxed energy/atom (eV):-6.5656 b 5.319 Å β:90.0 ° b 5.319 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):0.52 c 6.522 Å γ:90.0 ° c 6.522 Å γ:90.0 °
Crystal system:orthorhombic Point group:mm2 Density (gcm-3):4.15 Volume (3):177.58 nAtoms_prim:16 nAtoms_conv:16
Download input files

Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 0.001I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 0.0006 eV

Static real-parts of dielectric function in x,y,z: 110.26,132.21,106.71


Finite-difference: elastic tensor and derived phonon properties [Reference]

Elastic tensor calculated for the conventional cell of the system with finite-difference method [Source-code]. For bulk structures, elastic constants are given in GPa unit . For layered materials, the elastic constants are rescaled with respect to vacuum padding (see the input files) and the units for elastic coefficients are in N/m . Phonons obtained [Source-code] from this calculation are also shown.

WARNING: Please note we provide finite-size cell phonons only. At least 1.2 nm x1.2 nm x1.2 nm size cell or more is generally needed for obtaining reliable phonon spectrum, but we take conventional cell of the structure only. For systems having primitive-cell phonon representation tables, I denotes infrared activity and R denotes Raman active modes (where applicabale). Selection of particular q-point mesh can give rise to unphysical negative modes in phonon density of states and phonon bandstructre. The minimum thermal conductivity was calculated using elastic tensor information following Clarke and Cahill formalism.

Voigt-bulk modulus (KV): 147.23 GPa, Voigt-shear modulus (GV): 51.88 GPa

Reuss-bulk modulus (KR): 147.12 GPa, Reuss-shear modulus (GR): -9546.73 GPa

Poisson's ratio: -1.15, Elastic anisotropy parameter: -5.03

Clarke's lower limit of thermal conductivity (W/(m.K)): 4.53

Cahill's lower limit of thermal conductivity (W/(m.K)): nan

Elastic tensor
246.1 108.0 81.5 0.0 0.0 -0.0
108.0 249.4 94.1 -0.0 -0.0 0.0
81.5 94.1 262.4 0.0 0.0 0.0
0.0 -0.0 0.0 50.1 0.0 0.0
0.0 -0.0 0.0 0.0 -16.4 0.0
-0.0 0.0 -0.0 0.0 0.0 67.6

Phonon mode (cm-1)
-42.85
-0.06
-0.06
0.05
59.11
68.28
97.6
112.57
128.89
148.39
152.95
158.13
203.13
222.88
224.3
230.04
244.03
272.6
294.1
317.51
317.61
326.23
354.75
372.68
380.35
401.57
413.83
433.23
449.8
467.14
474.14
483.69
533.6
540.76
574.84
617.24
630.26
631.01
633.13
638.0
851.02
854.99
856.75
865.26
872.78
885.6
890.22
896.0

Point group

point_group_type: mm2

Visualize Phonons here
Phonon mode (cm-1) Representation
-42.85
-42.8509385023
-0.06
-0.0577213197
-0.06
-0.0557989377
0.05
0.0537504192
59.11
59.1149235274
68.28
68.2828140305
97.6
97.6003312518
112.57
112.572083842
128.89
128.886679441
148.39
148.392839696
152.95
152.949445486
158.13
158.127509679
203.13
203.131008275
222.88
222.880538629
224.3
224.299233845
230.04
230.039781424
244.03
244.029154373
272.6
272.598787732
294.1
294.098214482
317.51
317.51470176
317.61
317.614123845
326.23
326.226583167
354.75
354.748881184
372.68
372.678649628
380.35
380.34879407
401.57
401.574717212
413.83
413.83086355
433.23
433.225027152
449.8
449.799263692
467.14
467.143860991
474.14
474.140078282
483.69
483.694485139
533.6
533.59651451
540.76
540.760150681
574.84
574.838799594
617.24
617.24439734
630.26
630.260852584
631.01
631.014228718
633.13
633.132924662
638.0
637.999868431
851.02
851.016257352
854.99
854.989906619
856.75
856.747579202
865.26
865.259894582
872.78
872.775053125
885.6
885.602352616
890.22
890.218380094
896.0
896.000313747

Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

0.78 0.0 -0.0
0.0 0.54 0.0
-0.0 0.0 1.34

Hole mass tensor (me unit)

0.58 0.0 -0.0
0.0 0.89 0.0
-0.0 0.0 1.79

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck -286.58 -258.34 -236.83
n-PowerFactor 569.93 827.17 1020.36
n-Conductivity 8539.88 10071.96 18192.1
n-ZT 0.32 0.44 0.54
p-Seebeck 308.46 341.74 348.84
p-PowerFactor 448.74 674.37 1263.05
p-Conductivity 3842.4 5541.73 13274.3
p-ZT 0.26 0.38 0.69

Magnetic moment [Reference]

The orbital magnetic moment was obtained after SCF run. This is not a DFT+U calculation, hence the data could be used to predict zero or non-zero magnetic moment nature of the material only.

Total magnetic moment: -19.9939 μB

Magnetic moment per atom: -1.24961875 μB

Magnetization
Elementsspdtot
Mn-0.03-0.065-4.222-4.317
Mn-0.03-0.065-4.222-4.317
Mn-0.03-0.065-4.221-4.316
Mn-0.029-0.066-4.223-4.318
Si-0.012-0.020.0-0.031
Si-0.012-0.020.0-0.032
Si-0.013-0.0190.0-0.031
Si-0.012-0.020.0-0.032
N-0.007-0.0820.0-0.09
N-0.008-0.0840.0-0.092
N-0.009-0.0830.0-0.092
N-0.008-0.0820.0-0.09
N-0.009-0.0780.0-0.087
N-0.009-0.0810.0-0.09
N-0.008-0.080.0-0.088
N-0.009-0.080.0-0.089

See also

Links to other databases or papers are provided below


mp-3606

ICSD-ID: 172193

AFLOW link

MP link
mp-3606

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