JVASP-3366_Ba2MnZn2(AsO)2
JARVIS-ID:JVASP-3366 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:Ba2MnZn2(AsO)2 Formation energy/atom (eV):-1.379 a 4.22 Å α:101.746 ° a 4.22 Å α:90.0 °
Space-group :I4/mmm, 139 Relaxed energy/atom (eV):-2.8657 b 4.22 Å β:101.746 ° b 4.22 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):0.019 c 10.365 Å γ:90.0 ° c 19.853 Å γ:90.0 °
Crystal system:tetragonal Point group:4/mmm Density (gcm-3):6.03 Volume (3):176.8 nAtoms_prim:9 nAtoms_conv:18
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Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties METAGGA-MBJ [Reference]

Single point DFT calculation was carried out with meta-gga MBJ potential [Source-code]. This should give reasonable bandgap, and optical properties assuming the calculation was properly converged. Incident photon energy dependence of optical is shown below. Only interband optical transitions are taken into account. Also, ionic contributions were neglected.

MBJ bandgap is : 0.0017 eV

Static real-parts of dielectric function in x,y,z: 99.99,98.43,74.72


Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

0.0 0.0 0.0
0.0 0.0 0.0
0.0 0.0 0.0

Hole mass tensor (me unit)

0.0 0.0 0.0
0.0 0.0 0.0
0.0 0.0 0.0

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck -94.62 7.11 7.12
n-PowerFactor 49.52 49.53 1788.86
n-Conductivity 199805.67 977019.94 977046.25
n-ZT 0.0 0.0 0.3
p-Seebeck -98.52 6.94 6.94
p-PowerFactor 47.09 47.45 1733.35
p-Conductivity 178560.41 985772.09 985801.18
p-ZT 0.0 0.0 0.31

Magnetic moment [Reference]

The orbital magnetic moment was obtained after SCF run. This is not a DFT+U calculation, hence the data could be used to predict zero or non-zero magnetic moment nature of the material only.

Total magnetic moment: 4.5883 μB

Magnetic moment per atom: 0.509811111111 μB

Magnetization
Elementsspdtot
O0.0110.0480.00.06
O0.0060.0740.00.081
Mn0.0470.0244.04.07
Zn0.00.0040.0020.006
Zn0.00.0040.0020.006
As0.0030.020.00.023
As0.0030.020.00.023
Ba-0.00.0010.0010.002
Ba-0.00.0010.0010.002

See also

Links to other databases or papers are provided below


mp-19045

ICSD-ID: 85659

AFLOW link

MP link
mp-19045

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