JVASP-30684_ZnSnO2
JARVIS-ID:JVASP-30684 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:ZnSnO2 Formation energy/atom (eV):-1.376 a 3.39 Å α:93.946 ° a 15.921 Å α:90.0 °
Space-group :C2/m, 12 Relaxed energy/atom (eV):-2.5938 b 10.4 Å β:77.979 ° b 3.39 Å β:98.502 °
Calculation type:Bulk SCF bandgap (eV):1.455 c 8.139 Å γ:70.974 ° c 9.832 Å γ:90.0 °
Crystal system:monoclinic Point group:2/m Density (gcm-3):5.47 Volume (3):262.44 nAtoms_prim:16 nAtoms_conv:32
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Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 1.744I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 1.4549 eV

Static real-parts of dielectric function in x,y,z: 6.08,5.45,5.98


Magnetic moment [Reference]

The orbital magnetic moment was obtained after SCF run. This is not a DFT+U calculation, hence the data could be used to predict zero or non-zero magnetic moment nature of the material only.

Total magnetic moment: 0.0 μB

Magnetic moment per atom: 0.0 μB

Magnetization
Elementsspdtot
Zn-0.0-0.0-0.0-0.0
Zn0.00.00.00.0
Zn0.00.00.00.0
Zn0.00.00.00.0
Sn0.00.00.00.0
Sn0.00.00.00.0
Sn-0.0-0.0-0.0-0.0
Sn-0.00.0-0.0-0.0
O-0.0-0.00.0-0.0
O-0.0-0.00.0-0.0
O-0.0-0.00.0-0.0
O-0.0-0.00.0-0.0
O-0.0-0.00.0-0.0
O-0.0-0.00.0-0.0
O-0.0-0.00.0-0.0
O-0.0-0.00.0-0.0

See also

Links to other databases or papers are provided below

mvc-4962

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