JVASP-29756_Ga2Fe2S5
JARVIS-ID:JVASP-29756 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:Ga2Fe2S5 Formation energy/atom (eV):-0.507 a 3.603 Å α:90.003 ° a 3.603 Å α:90.0 °
Space-group :P6_3/mmc, 194 Relaxed energy/atom (eV):-2.781 b 3.603 Å β:89.998 ° b 3.603 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):0.009 c 29.988 Å γ:120.001 ° c 29.988 Å γ:120.0 °
Crystal system:hexagonal Point group:6/mmm Density (gcm-3):4.05 Volume (3):337.13 nAtoms_prim:18 nAtoms_conv:18
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Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 0.0I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 0.0184 eV

Static real-parts of dielectric function in x,y,z: 38.08,38.08,34.15


Magnetic moment [Reference]

The orbital magnetic moment was obtained after SCF run. This is not a DFT+U calculation, hence the data could be used to predict zero or non-zero magnetic moment nature of the material only.

Total magnetic moment: 12.8679 μB

Magnetic moment per atom: 0.714883333333 μB

Magnetization
Elementsspdtot
Ga0.0040.0090.0030.015
Ga0.0040.0090.0030.015
Ga0.0040.0090.0030.015
Ga0.0040.0090.0030.015
Fe0.0210.0252.8572.903
Fe0.0210.0252.8572.902
Fe0.0210.0252.8572.902
Fe0.0210.0252.8572.903
S0.0240.0640.00.089
S0.00.0120.00.012
S0.0240.0640.00.089
S0.0290.060.00.089
S0.00.0120.00.012
S0.00.0120.00.012
S0.0240.0640.00.089
S0.00.0120.00.012
S0.0240.0640.00.089
S0.0290.060.00.089

See also

Links to other databases or papers are provided below

ICSD-ID: 72363

AFLOW link
mp-616672

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