JVASP-29747_Ga2Fe2S5
JARVIS-ID:JVASP-29747 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:Ga2Fe2S5 Formation energy/atom (eV):-0.485 a 15.153 Å α:13.719 ° a 3.62 Å α:90.0 °
Space-group :R-3m, 166 Relaxed energy/atom (eV):-2.7593 b 15.153 Å β:13.719 ° b 3.62 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):0.013 c 15.153 Å γ:13.719 ° c 45.026 Å γ:120.0 °
Crystal system:trigonal Point group:-3m Density (gcm-3):4.01 Volume (3):170.29 nAtoms_prim:9 nAtoms_conv:27
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Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 0.001I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 0.0131 eV

Static real-parts of dielectric function in x,y,z: 71.08,71.49,29.74


Magnetic moment [Reference]

The orbital magnetic moment was obtained after SCF run. This is not a DFT+U calculation, hence the data could be used to predict zero or non-zero magnetic moment nature of the material only.

Total magnetic moment: 7.1825 μB

Magnetic moment per atom: 0.798055555556 μB

Magnetization
Elementsspdtot
Ga0.0060.0090.0040.018
Ga0.0060.0090.0040.018
Fe0.0310.0313.0873.149
Fe0.0310.0313.0873.149
S0.00.0150.00.015
S0.0250.0950.00.12
S0.00.0150.00.015
S0.0250.0950.00.12
S0.030.1190.00.149

See also

Links to other databases or papers are provided below

ICSD-ID: 36243

AFLOW link
mp-608823

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