JVASP-29555_TiCl3
JARVIS-ID:JVASP-29555 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:TiCl3 Formation energy/atom (eV):-1.631 a 5.962 Å α:90.0 ° a 5.962 Å α:90.0 °
Space-group :P312, 149 Relaxed energy/atom (eV):-3.0043 b 5.962 Å β:90.0 ° b 5.962 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):0.003 c 17.552 Å γ:120.0 ° c 17.552 Å γ:120.0 °
Crystal system:trigonal Point group:32 Density (gcm-3):2.84 Volume (3):540.26 nAtoms_prim:24 nAtoms_conv:24
Download input files

Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 0.001I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 0.003 eV

Static real-parts of dielectric function in x,y,z: 38.93,38.93,14.48


Optoelectronic properties METAGGA-MBJ [Reference]

Single point DFT calculation was carried out with meta-gga MBJ potential [Source-code]. This should give reasonable bandgap, and optical properties assuming the calculation was properly converged. Incident photon energy dependence of optical is shown below. Only interband optical transitions are taken into account. Also, ionic contributions were neglected.

MBJ bandgap is : 0.0022 eV

Static real-parts of dielectric function in x,y,z: 53.49,53.46,17.46


Finite-difference: elastic tensor and derived phonon properties [Reference]

Elastic tensor calculated for the conventional cell of the system with finite-difference method [Source-code]. For bulk structures, elastic constants are given in GPa unit . For layered materials, the elastic constants are rescaled with respect to vacuum padding (see the input files) and the units for elastic coefficients are in N/m . Phonons obtained [Source-code] from this calculation are also shown.

WARNING: Please note we provide finite-size cell phonons only. At least 1.2 nm x1.2 nm x1.2 nm size cell or more is generally needed for obtaining reliable phonon spectrum, but we take conventional cell of the structure only. For systems having primitive-cell phonon representation tables, I denotes infrared activity and R denotes Raman active modes (where applicabale). Selection of particular q-point mesh can give rise to unphysical negative modes in phonon density of states and phonon bandstructre. The minimum thermal conductivity was calculated using elastic tensor information following Clarke and Cahill formalism.

Voigt-bulk modulus (KV): 23.96 GPa, Voigt-shear modulus (GV): 16.03 GPa

Reuss-bulk modulus (KR): 21.22 GPa, Reuss-shear modulus (GR): 9.51 GPa

Poisson's ratio: 0.26, Elastic anisotropy parameter: 3.56

Clarke's lower limit of thermal conductivity (W/(m.K)): 0.51

Cahill's lower limit of thermal conductivity (W/(m.K)): 0.56

Elastic tensor
63.3 14.4 6.8 0.0 0.0 3.8
14.4 63.3 6.8 -0.0 0.0 -3.8
6.8 6.8 33.0 -0.0 0.0 -0.0
0.0 -0.0 -0.0 24.5 -3.8 0.0
0.0 0.0 0.0 -3.8 5.9 -0.0
3.8 -3.8 -0.0 -0.0 -0.0 5.9

Phonon mode (cm-1)
-85.65
-85.65
-85.11
-85.11
-84.67
-84.67
-0.07
-0.04
0.02
23.92
23.92
25.04
25.04
55.28
56.02
103.45
103.45
106.26
106.26
110.45
110.45
131.36
131.7
131.87
133.97
135.87
136.78
141.36
141.36
145.24
145.24
147.61
147.61
154.44
155.86
159.42
208.06
208.06
208.93
208.93
209.44
209.44
239.56
239.56
240.63
240.63
242.07
242.07
254.39
255.44
255.91
264.57
264.92
265.55
271.58
271.58
272.9
272.9
273.05
273.05
275.9
276.28
289.26
304.13
304.13
304.36
304.36
304.87
304.87
363.22
385.95
386.45

Point group

point_group_type: 32

Visualize Phonons here
Phonon mode (cm-1) Representation
-85.65
-85.6525949067
-85.11
-85.1135503932
-84.67
-84.6745826157
-0.07
-0.0736858909
-0.04
-0.0432954357
0.02
0.0204460207
23.92
23.9151128686
25.04
25.0386916154
55.28
55.280325103
56.02
56.0205593062
103.45
103.447770201
106.26
106.261502424
110.45
110.454495333
131.36
131.356716061
131.7
131.6969907
131.87
131.871203498
133.97
133.971821071
135.87
135.874631415
136.78
136.775901883
141.36
141.360245275
145.24
145.237151422
147.61
147.609902859
154.44
154.437823996
155.86
155.856742711
159.42
159.423501534
208.06
208.055279021
208.93
208.927163688
209.44
209.44168378
239.56
239.557726925
240.63
240.62866324
242.07
242.073358193
254.39
254.39076435
255.44
255.441290872
255.91
255.907272364
264.57
264.565573517
264.92
264.91907259
265.55
265.550878079
271.58
271.58174374
272.9
272.897085491
273.05
273.050475159
275.9
275.899599683
276.28
276.283656171
289.26
289.259116884
304.13
304.127973367
304.36
304.358900762
304.87
304.866269998
363.22
363.220173912
385.95
385.951165049
386.45
386.453901936

Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

0.0 0.0 -0.0
0.0 0.0 -0.0
-0.0 -0.0 0.0

Hole mass tensor (me unit)

0.0 0.0 -0.0
0.0 0.0 -0.0
-0.0 -0.0 0.0

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck -51.44 -34.08 -34.08
n-PowerFactor 22.78 514.19 514.19
n-Conductivity 8610.55 442778.56 442778.76
n-ZT 0.01 0.07 0.07
p-Seebeck -52.78 -35.72 -35.72
p-PowerFactor 23.75 560.81 560.81
p-Conductivity 8526.44 439526.55 439526.75
p-ZT 0.01 0.07 0.07

See also

Links to other databases or papers are provided below


mp-568230

ICSD-ID: 39427

AFLOW link

MP link
mp-568230

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