JVASP-25791_Tl3Ga9S13O2
JARVIS-ID:JVASP-25791 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:Tl3Ga9S13O2 Formation energy/atom (eV):-0.884 a 9.663 Å α:90.0 ° a 9.663 Å α:90.0 °
Space-group :P-6, 174 Relaxed energy/atom (eV):-2.0366 b 9.663 Å β:90.0 ° b 9.663 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):2.253 c 7.447 Å γ:120.0 ° c 7.447 Å γ:120.0 °
Crystal system:hexagonal Point group:-6 Density (gcm-3):4.66 Volume (3):602.19 nAtoms_prim:27 nAtoms_conv:27
Download input files

Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 2.243I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 2.2532 eV

Static real-parts of dielectric function in x,y,z: 6.59,6.59,6.73


Optoelectronic properties METAGGA-MBJ [Reference]

Single point DFT calculation was carried out with meta-gga MBJ potential [Source-code]. This should give reasonable bandgap, and optical properties assuming the calculation was properly converged. Incident photon energy dependence of optical is shown below. Only interband optical transitions are taken into account. Also, ionic contributions were neglected.

MBJ bandgap is : 3.1899 eV

Static real-parts of dielectric function in x,y,z: 4.96,4.98,5.25


Solar-cell SLME [Reference]

Theoretical solar-cell efficiency (in %) was calculated using spectroscopy limited maximum efficiency (SLME) and TBmBJ for the material with 500 nm thickness and at 300 K. Note that generally there are many factors that contribute towards the efficiency, such as carrier effective mass etc.

SLME is: 2.83


Finite-difference: elastic tensor and derived phonon properties [Reference]

Elastic tensor calculated for the conventional cell of the system with finite-difference method [Source-code]. For bulk structures, elastic constants are given in GPa unit . For layered materials, the elastic constants are rescaled with respect to vacuum padding (see the input files) and the units for elastic coefficients are in N/m . Phonons obtained [Source-code] from this calculation are also shown.

WARNING: Please note we provide finite-size cell phonons only. At least 1.2 nm x1.2 nm x1.2 nm size cell or more is generally needed for obtaining reliable phonon spectrum, but we take conventional cell of the structure only. For systems having primitive-cell phonon representation tables, I denotes infrared activity and R denotes Raman active modes (where applicabale). Selection of particular q-point mesh can give rise to unphysical negative modes in phonon density of states and phonon bandstructre. The minimum thermal conductivity was calculated using elastic tensor information following Clarke and Cahill formalism.

Voigt-bulk modulus (KV): 38.64 GPa, Voigt-shear modulus (GV): 18.87 GPa

Reuss-bulk modulus (KR): 38.61 GPa, Reuss-shear modulus (GR): 17.89 GPa

Poisson's ratio: 0.29, Elastic anisotropy parameter: 0.28

Clarke's lower limit of thermal conductivity (W/(m.K)): 0.48

Cahill's lower limit of thermal conductivity (W/(m.K)): 0.54

Elastic tensor
63.9 30.4 19.9 -0.0 0.0 0.0
30.4 63.9 19.9 -0.0 -0.0 0.0
19.9 19.9 79.6 -0.0 0.0 0.0
-0.0 -0.0 -0.0 16.8 -0.0 -0.0
0.0 -0.0 -0.0 -0.0 15.9 0.0
0.0 0.0 0.0 -0.0 0.0 15.9

Phonon mode (cm-1)
-25.89
-0.11
-0.09
-0.07
23.35
23.35
24.52
28.67
28.67
30.83
43.0
43.0
49.47
62.07
65.75
65.75
89.55
90.02
90.02
95.41
95.41
98.66
102.55
102.55
102.94
102.94
103.34
106.68
113.11
113.11
127.16
127.16
127.21
132.19
142.31
142.31
156.7
156.7
158.09
158.59
158.59
170.63
170.63
198.38
209.56
214.06
229.95
248.03
248.03
259.97
270.19
302.56
302.56
306.14
307.61
307.61
316.47
330.67
330.67
336.04
336.04
346.96
346.96
347.67
351.27
351.27
352.91
353.17
354.59
356.65
356.65
369.06
370.04
370.04
374.01
380.3
380.3
567.65
567.65
582.18
582.18

Point group

point_group_type: m

Visualize Phonons here
Phonon mode (cm-1) Representation
-25.89
-25.8911185473
-0.11
-0.1090978245
-0.09
-0.0871583401
-0.07
-0.0655277108
23.35
23.3535521965
24.52
24.5172488204
28.67
28.6718837441
30.83
30.826494524
43.0
42.9994533691
49.47
49.4701785221
62.07
62.0702944004
65.75
65.7545788746
89.55
89.5517206266
90.02
90.0206871111
95.41
95.4090691963
98.66
98.6597843074
102.55
102.554172731
102.94
102.938163433
103.34
103.342327771
106.68
106.676263298
113.11
113.110669886
127.16
127.163723652
127.21
127.214487127
132.19
132.193980242
142.31
142.314573544
156.7
156.702895651
158.09
158.085159844
158.59
158.589434843
170.63
170.628706465
198.38
198.375256469
209.56
209.557550477
214.06
214.055734654
229.95
229.947827896
248.03
248.03131697
259.97
259.972101259
270.19
270.18955797
302.56
302.559642141
306.14
306.140967192
307.61
307.607047934
316.47
316.469494558
330.67
330.666713119
336.04
336.035396979
346.96
346.964232613
347.67
347.666164718
351.27
351.267823875
352.91
352.905289295
353.17
353.167087313
354.59
354.58939958
356.65
356.646548401
369.06
369.060701404
370.04
370.043067482
374.01
374.014359734
380.3
380.299845011
567.65
567.651398683
582.18
582.184158071

Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

4.64 0.0 -0.0
0.0 4.64 0.0
-0.0 0.0 0.58

Hole mass tensor (me unit)

4.23 -0.0 -0.0
-0.0 4.23 -0.0
-0.0 -0.0 6.99

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck -284.1 -259.15 -259.15
n-PowerFactor 339.66 339.66 4265.88
n-Conductivity 5057.71 5057.72 52853.99
n-ZT 0.19 0.19 1.71
p-Seebeck 311.31 311.31 382.02
p-PowerFactor 305.38 305.38 362.44
p-Conductivity 2483.54 3150.94 3150.94
p-ZT 0.18 0.18 0.21

See also

Links to other databases or papers are provided below


mp-556717

ICSD-ID: 61256

AFLOW link

MP link
mp-556717

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