JVASP-23429_U4Si6Tc7
JARVIS-ID:JVASP-23429 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:U4Si6Tc7 Formation energy/atom (eV):-0.536 a 7.131 Å α:109.471 ° a 8.235 Å α:90.0 °
Space-group :Im-3m, 229 Relaxed energy/atom (eV):-6.8693 b 7.131 Å β:109.471 ° b 8.235 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):0.004 c 7.131 Å γ:109.471 ° c 8.235 Å γ:90.0 °
Crystal system:cubic Point group:m-3m Density (gcm-3):10.75 Volume (3):279.2 nAtoms_prim:17 nAtoms_conv:34
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Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

0.0 0.0 -0.0
0.0 0.0 -0.0
-0.0 -0.0 0.0

Hole mass tensor (me unit)

0.0 0.0 -0.0
0.0 0.0 -0.0
-0.0 -0.0 0.0

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck 28.43 28.43 28.43
n-PowerFactor 873.62 873.62 873.62
n-Conductivity 1081223.34 1081223.97 1081225.19
n-ZT 0.03 0.03 0.03
p-Seebeck 27.91 27.91 27.91
p-PowerFactor 847.65 847.65 847.65
p-Conductivity 1088178.34 1088178.97 1088180.19
p-ZT 0.03 0.03 0.03

See also

Links to other databases or papers are provided below


mp-20471

ICSD-ID: 80520

AFLOW link

MP link
mp-20471

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