JVASP-23351_Na2MgAlF7
JARVIS-ID:JVASP-23351 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:Na2MgAlF7 Formation energy/atom (eV):-3.513 a 7.093 Å α:61.703 ° a 7.093 Å α:90.0 °
Space-group :Ima2, 46 Relaxed energy/atom (eV):-3.3134 b 7.173 Å β:60.365 ° b 7.357 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):7.066 c 7.173 Å γ:60.365 ° c 10.068 Å γ:90.0 °
Crystal system:orthorhombic Point group:mm2 Density (gcm-3):2.91 Volume (3):262.68 nAtoms_prim:22 nAtoms_conv:44
Download input files

Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 7.061I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 7.0655 eV

Static real-parts of dielectric function in x,y,z: 1.87,1.88,1.88


Optoelectronic properties METAGGA-MBJ [Reference]

Single point DFT calculation was carried out with meta-gga MBJ potential [Source-code]. This should give reasonable bandgap, and optical properties assuming the calculation was properly converged. Incident photon energy dependence of optical is shown below. Only interband optical transitions are taken into account. Also, ionic contributions were neglected.

MBJ bandgap is : 11.15 eV

Static real-parts of dielectric function in x,y,z: 1.55,1.55,1.55


Finite-difference: elastic tensor and derived phonon properties [Reference]

Elastic tensor calculated for the conventional cell of the system with finite-difference method [Source-code]. For bulk structures, elastic constants are given in GPa unit . For layered materials, the elastic constants are rescaled with respect to vacuum padding (see the input files) and the units for elastic coefficients are in N/m . Phonons obtained [Source-code] from this calculation are also shown.

WARNING: Please note we provide finite-size cell phonons only. At least 1.2 nm x1.2 nm x1.2 nm size cell or more is generally needed for obtaining reliable phonon spectrum, but we take conventional cell of the structure only. For systems having primitive-cell phonon representation tables, I denotes infrared activity and R denotes Raman active modes (where applicabale). Selection of particular q-point mesh can give rise to unphysical negative modes in phonon density of states and phonon bandstructre. The minimum thermal conductivity was calculated using elastic tensor information following Clarke and Cahill formalism.

Voigt-bulk modulus (KV): 68.79 GPa, Voigt-shear modulus (GV): 43.63 GPa

Reuss-bulk modulus (KR): 68.27 GPa, Reuss-shear modulus (GR): 42.68 GPa

Poisson's ratio: 0.24, Elastic anisotropy parameter: 0.12

Clarke's lower limit of thermal conductivity (W/(m.K)): 1.39

Cahill's lower limit of thermal conductivity (W/(m.K)): 1.52

Elastic tensor
129.2 29.7 45.7 -0.0 -0.0 0.0
29.7 118.8 45.4 -0.0 -0.0 -0.0
45.7 45.4 129.5 0.0 0.0 0.0
-0.0 -0.0 0.0 34.8 0.0 0.0
-0.0 0.0 0.0 0.0 49.9 0.0
0.0 0.0 0.0 0.0 0.0 47.9

Phonon mode (cm-1)
-6.31
-0.16
-0.1
-0.01
28.27
31.89
37.31
55.44
59.55
65.87
67.66
76.39
78.13
97.35
103.61
107.3
110.37
111.36
112.17
113.12
120.74
123.02
123.16
123.78
126.54
131.93
132.89
135.49
135.98
139.8
143.44
144.08
146.19
146.47
156.63
157.16
157.85
158.64
159.92
159.96
163.42
168.25
169.9
170.5
170.79
170.92
172.09
177.94
187.95
188.16
202.87
203.25
205.73
213.08
218.06
218.15
222.51
223.98
225.32
234.16
236.52
237.61
238.3
256.07
261.95
270.81
281.56
281.9
283.83
285.08
286.99
287.16
287.33
287.53
294.89
299.2
303.76
313.76
320.07
322.16
331.57
332.63
332.88
339.17
340.65
340.87
348.68
353.73
370.94
371.08
376.93
377.69
385.25
397.19
397.23
400.24
407.48
414.12
417.77
431.18
433.28
433.95
437.0
457.09
461.82
473.51
475.15
490.41
491.17
495.7
506.58
509.35
513.79
523.25
523.86
528.02
530.81
543.71
544.09
557.34
580.67
598.56
600.17
619.2
619.5
621.83
626.51
627.14
638.1
644.27
679.96
699.83

Point group

point_group_type: mm2

Visualize Phonons here
Phonon mode (cm-1) Representation
-0.16
-0.1558804294
-0.1
-0.1049569019
-0.01
-0.0055516359
28.27
28.2671519912
37.31
37.3068922561
55.44
55.4384651973
65.87
65.8721209003
97.35
97.3541390065
103.61
103.612088522
107.3
107.298802217
123.02
123.016272474
126.54
126.540156017
131.93
131.931021076
135.49
135.48612964
135.98
135.982632466
144.08
144.082105404
146.19
146.192051746
157.85
157.849345266
158.64
158.636702879
159.92
159.921382821
159.96
159.959340956
163.42
163.421541601
170.79
170.791504592
177.94
177.939954941
187.95
187.945312002
203.25
203.247843131
213.08
213.080609502
218.06
218.059351592
222.51
222.50824234
223.98
223.98490114
225.32
225.323475778
236.52
236.517227298
256.07
256.06876431
270.81
270.809185037
281.56
281.557598429
285.08
285.081720893
286.99
286.993204732
287.16
287.164972867
299.2
299.199314852
322.16
322.164868968
331.57
331.567901419
332.63
332.626194283
332.88
332.880202559
339.17
339.171084093
340.65
340.648429717
377.69
377.693757074
397.19
397.192568742
400.24
400.238727044
407.48
407.476749225
417.77
417.773108538
457.09
457.085299997
473.51
473.505328495
475.15
475.145731393
495.7
495.700672683
509.35
509.348977095
523.25
523.249430839
523.86
523.857953258
528.02
528.024822865
530.81
530.810194067
543.71
543.712576167
580.67
580.668501075
600.17
600.167680121
619.2
619.201345175
626.51
626.505851035
638.1
638.096681614
644.27
644.270564095

Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

0.7 -0.13 -0.15
-0.13 0.8 0.23
-0.15 0.23 0.88

Hole mass tensor (me unit)

13.66 16.16 -12.02
16.16 55.47 -28.3
-12.02 -28.3 27.84

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck -175.18 -158.14 -157.67
n-PowerFactor 1088.83 1261.66 1281.25
n-Conductivity 35478.83 50450.2 51542.13
n-ZT 0.46 0.49 0.49
p-Seebeck 431.57 445.23 528.85
p-PowerFactor 79.85 179.86 382.67
p-Conductivity 285.5 965.68 1930.46
p-ZT 0.05 0.11 0.23

See also

Links to other databases or papers are provided below


mp-19931

ICSD-ID: 33514

AFLOW link

MP link
mp-19931

NIST Disclaimer