JVASP-19513_P4S3
JARVIS-ID:JVASP-19513 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:P4S3 Formation energy/atom (eV):-0.044 a 6.459 Å α:90.0 ° a 6.459 Å α:90.0 °
Space-group :Pmc2_1, 26 Relaxed energy/atom (eV):-3.3801 b 10.915 Å β:90.0 ° b 10.915 Å β:90.0 °
Calculation type:1L SCF bandgap (eV):2.101 c 25.98 Å γ:90.0 ° c 25.98 Å γ:90.0 °
Crystal system:orthorhombic Point group:mm2 Density (gcm-3):0.4 Volume (3):1831.53 nAtoms_prim:14 nAtoms_conv:14
Download input files

Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Exfoliation energy [Reference]

Exfoliation energy (meV/atom) is: 104.64


Spin-orbit coupling based spillage [Reference]

Below we show results from spin-orbit coupling (SOC) based spillage calculations using wavefunctions of spin-orbit and non-spin-orbit bandstructure calculations. a) non-SOC band structure and b) SOC band structure, c) non-SOC projected band structure and d) SOC projected band structure, projecting onto highest energy orbital of most electronegative atom in the system (assuming the orbital forms the valence band-maximum). e) Spillage, as a function of momentum, k. f) Table of bandgaps and spillage information. Generally, spillage values greater than 0.5 and indirect gap close to zero indicate topological materials.

Spin-orbit spillage is: 0.001


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 1.5652 eV

Static real-parts of dielectric function in x,y,z: 2.09,2.02,1.85


Finite-difference: elastic tensor and derived phonon properties [Reference]

Elastic tensor calculated for the conventional cell of the system with finite-difference method [Source-code]. For bulk structures, elastic constants are given in GPa unit . For layered materials, the elastic constants are rescaled with respect to vacuum padding (see the input files) and the units for elastic coefficients are in N/m . Phonons obtained [Source-code] from this calculation are also shown.

WARNING: Please note we provide finite-size cell phonons only. At least 1.2 nm x1.2 nm x1.2 nm size cell or more is generally needed for obtaining reliable phonon spectrum, but we take conventional cell of the structure only. For systems having primitive-cell phonon representation tables, I denotes infrared activity and R denotes Raman active modes (where applicabale). Selection of particular q-point mesh can give rise to unphysical negative modes in phonon density of states and phonon bandstructre. The minimum thermal conductivity was calculated using elastic tensor information following Clarke and Cahill formalism.

Elastic tensor
8.1 2.6 -0.0 -0.0 -0.0 0.0
2.6 8.9 0.0 -0.0 -0.0 -0.0
-0.0 0.0 0.1 -0.0 0.0 0.0
0.0 0.0 -0.0 1.3 -0.0 -0.0
-0.0 -0.0 -0.0 -0.0 0.1 -0.0
0.0 0.0 0.0 -0.0 0.0 0.0

Phonon mode (cm-1)
-1.95
-0.77
-0.26
22.73
25.06
27.2
37.59
41.09
42.48
46.57
49.75
77.54
181.45
181.69
214.13
214.52
215.04
216.23
276.72
278.65
281.93
283.21
316.6
317.1
317.79
319.82
331.1
339.06
386.51
386.66
394.86
396.4
403.95
404.12
420.05
422.04
449.44
449.73
457.14
458.29
459.39
461.02

Point group

point_group_type: mm2

Visualize Phonons here
Phonon mode (cm-1) Representation
-1.95
-1.9515354621
-0.77
-0.7670649444
-0.26
-0.2625220555
22.73
22.7283750685
25.06
25.0623988726
27.2
27.1984999532
37.59
37.5913196775
41.09
41.0946326246
42.48
42.4801439562
46.57
46.5666967859
49.75
49.7485958373
77.54
77.5436661637
181.45
181.452644242
181.69
181.693698073
214.13
214.133767158
214.52
214.516829529
215.04
215.036296759
216.23
216.233740214
276.72
276.72003042
278.65
278.64624526
281.93
281.928261852
283.21
283.210606966
316.6
316.596962752
317.1
317.095232287
317.79
317.793702786
319.82
319.818082276
331.1
331.097559649
339.06
339.058111064
386.51
386.506463104
386.66
386.661065722
394.86
394.857779858
396.4
396.401568462
403.95
403.953800631
404.12
404.117498593
420.05
420.048252862
422.04
422.036453094
449.44
449.435379147
449.73
449.730228993
457.14
457.141504928
458.29
458.285872522
459.39
459.391250128
461.02
461.016809602

Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

1.51 0.0 -0.0
0.0 1.17 -0.0
-0.0 -0.0 19828.37

Hole mass tensor (me unit)

2.53 0.0 -0.0
0.0 13.62 0.0
-0.0 0.0 6829.91

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck -141.12 -96.74 -66.14
n-PowerFactor 0.01 45.86 405.84
n-Conductivity 1.08 10484.97 20379.87
n-ZT 0.0 0.03 0.2
p-Seebeck 250.08 302.14 318.67
p-PowerFactor 0.12 204.12 764.97
p-Conductivity 1.89 2010.12 8379.46
p-ZT 0.0 0.12 0.44

Magnetic moment [Reference]

The orbital magnetic moment was obtained after SCF run. This is not a DFT+U calculation, hence the data could be used to predict zero or non-zero magnetic moment nature of the material only.

Total magnetic moment: -0.0 μB

Magnetic moment per atom: -0.0 μB

Magnetization
Elementsspdtot
P0.00.00.00.0
P0.00.00.00.0
P0.00.00.00.0
P0.00.00.00.0
P0.00.00.00.0
P0.00.00.00.0
P0.0-0.00.0-0.0
P0.0-0.00.0-0.0
S-0.0-0.00.0-0.0
S-0.0-0.00.0-0.0
S0.00.00.00.0
S0.00.00.00.0
S-0.0-0.00.0-0.0
S-0.0-0.00.0-0.0

See also

Links to other databases or papers are provided below


NA

ICSD-ID: None

mp-1469-1L

NIST Disclaimer