JVASP-10722_Al4CN3O
JARVIS-ID:JVASP-10722 Functional:optB88-vdW Primitive cell Primitive cell Conventional cell Conventional cell
Chemical formula:Al4CN3O Formation energy/atom (eV):-0.838 a 5.373 Å α:90.0 ° a 6.083 Å α:90.0 °
Space-group :Cmc2_1, 36 Relaxed energy/atom (eV):-5.3724 b 5.373 Å β:90.0 ° b 8.859 Å β:90.0 °
Calculation type:Bulk SCF bandgap (eV):0.286 c 8.983 Å γ:111.051 ° c 8.983 Å γ:90.0 °
Crystal system:orthorhombic Point group:mm2 Density (gcm-3):2.44 Volume (3):242.05 nAtoms_prim:18 nAtoms_conv:36
Download input files

Convergence [Reference]

Calculations are done using VASP software [Source-code]. Convergence on KPOINTS [Source-code] and ENCUT [Source-code] is done with respect to total energy of the system within 0.001 eV tolerance. Please note convergence on KPOINTS and ENCUT is generally done for target properties, but here we assume energy-convergence with 0.001 eV should be sufficient for other properties also. The points on the curves are obtained with single-point calculation (number of ionic steps, NSW=1 ). However, for very accurate calculations, NSW>1 might be needed.


Structural analysis [Reference]

The following shows the X-ray diffraction (XRD)[Source-code] pattern and the Radial distribution function (RDF) plots [Source-code]. XRD peaks should be comparable to experiments for bulk structures. Relative intensities may differ. For mono- and multi-layer structures , we take the z-dimension during DFT calculation for XRD calculations, which may differ from the experimental set-up.


Electronic structure [Reference]

The following shows the electronic density of states and bandstructure [Source-code]. DFT is generally predicted to underestimate bandgap of materials. Accurate band-gaps are obtained with higher level methods (with high computational requirement) such as HSE, GW , which are under progress. If available, MBJ data should be comparable to experiments also. Total DOS, Orbital DOS and Element dos [Source-code] buttons are provided for density of states options. Energy is rescaled to make Fermi-energy zero. In the bandstructure plot [Source-code], spin up is shown with blue lines while spin down are shown with red lines. Non-degenerate spin-up and spin-down states (if applicable) would imply a net orbital magnetic moment in the system. Fermi-occupation tolerance for bandgap calculation is chosen as 0.001.

High-symmetry kpoints based bandgap (eV): 0.271I


Electrostatic potential [Reference]

The following plot shows the plane averaged electrostatic potential (ionic+Hartree) along x, y and z-directions. The red line shows the Fermi-energy while the green line shows the maximum value of the electrostatic potential. For slab structures (with vacuum along z-direction), the difference in these two values can be used to calculate work-function of the material.


Optoelectronic properties Semi-local [Reference]

Incident photon energy dependence of optical is shown below [Source-code]. Only interband optical transitions are taken into account.Please note the underestimatation of band-gap problem with DFT will reflect in the spectra as well. For very accurate optical properties GW/BSE calculation would be needed, which is yet to be done because of their very high computational cost. Optical properties for mono-/multi-layer materials were rescaled with the actual thickness to simulation z-box ratio. Absorption coeffiecient is in cm-1 unit. Also, ionic contributions were neglected.

Dense k-mesh based bandgap is : 0.0081 eV

Static real-parts of dielectric function in x,y,z: 76.94,84.68,65.15


Finite-difference: elastic tensor and derived phonon properties [Reference]

Elastic tensor calculated for the conventional cell of the system with finite-difference method [Source-code]. For bulk structures, elastic constants are given in GPa unit . For layered materials, the elastic constants are rescaled with respect to vacuum padding (see the input files) and the units for elastic coefficients are in N/m . Phonons obtained [Source-code] from this calculation are also shown.

WARNING: Please note we provide finite-size cell phonons only. At least 1.2 nm x1.2 nm x1.2 nm size cell or more is generally needed for obtaining reliable phonon spectrum, but we take conventional cell of the structure only. For systems having primitive-cell phonon representation tables, I denotes infrared activity and R denotes Raman active modes (where applicabale). Selection of particular q-point mesh can give rise to unphysical negative modes in phonon density of states and phonon bandstructre. The minimum thermal conductivity was calculated using elastic tensor information following Clarke and Cahill formalism.

Voigt-bulk modulus (KV): 76.94 GPa, Voigt-shear modulus (GV): -0.81 GPa

Reuss-bulk modulus (KR): -112.38 GPa, Reuss-shear modulus (GR): -14.47 GPa

Poisson's ratio: 0.31, Elastic anisotropy parameter: -6.4

Clarke's lower limit of thermal conductivity (W/(m.K)): nan

Cahill's lower limit of thermal conductivity (W/(m.K)): nan

Elastic tensor
200.6 76.8 115.8 0.0 0.0 0.0
76.8 -2.3 31.0 0.0 0.0 0.0
115.8 31.0 47.0 0.0 0.0 0.0
0.0 0.0 0.0 -24.7 -0.0 -0.0
0.0 0.0 0.0 -0.0 -9.8 0.0
0.0 0.0 0.0 0.0 0.0 23.2

Phonon mode (cm-1)
-0.12
-0.1
-0.04
113.17
118.17
135.51
141.29
149.92
157.66
186.14
191.64
212.98
227.35
232.65
242.22
263.04
289.33
293.87
313.47
330.89
346.69
350.38
354.68
364.63
369.65
403.95
404.41
413.42
428.92
431.1
489.11
492.47
503.49
510.91
548.76
552.12
575.66
575.99
602.37
605.22
663.55
669.72
687.74
690.63
695.17
695.39
730.58
736.89
767.96
770.89
772.12
774.6
841.35
842.98

Point group

point_group_type: mm2

Visualize Phonons here
Phonon mode (cm-1) Representation
-0.12
-0.1224996322
-0.1
-0.1046478231
-0.04
-0.0387125126
113.17
113.170927337
118.17
118.167478862
135.51
135.509723912
141.29
141.287436358
149.92
149.917595408
157.66
157.664172118
186.14
186.136202573
191.64
191.643562373
212.98
212.980912977
227.35
227.352498964
232.65
232.64959838
242.22
242.221967117
263.04
263.036441566
289.33
289.328025738
293.87
293.874003998
313.47
313.4680128
330.89
330.892375604
346.69
346.691457756
350.38
350.382363939
354.68
354.683362428
364.63
364.634159229
369.65
369.647755106
403.95
403.954639253
404.41
404.40618349
413.42
413.422835447
428.92
428.919348338
431.1
431.102665805
489.11
489.105838119
492.47
492.473390254
503.49
503.489587155
510.91
510.906145386
548.76
548.756938115
552.12
552.122754509
575.66
575.662578516
575.99
575.991505346
602.37
602.368496835
605.22
605.224299853
663.55
663.548506938
669.72
669.721023852
687.74
687.740979723
690.63
690.629822675
695.17
695.171196925
695.39
695.385297979
730.58
730.577137776
736.89
736.8927852
767.96
767.955812806
770.89
770.894677944
772.12
772.12200309
774.6
774.60029379
841.35
841.353031745
842.98
842.984890039

Thermoelectric properties [Reference]

Thermoelectric properties are calculated using BoltzTrap code [Source-code]. Electron and hole mass tensors (useful for semiconductors and insulators mainly)are given at 300 K [Source-code]. Following plots show the Seebeck coefficient and ZT factor (eigenvalues of the tensor shown) at 300 K along three different crystallographic directions. Seebeck coefficient and ZT plots can be compared for three different temperatures available through the buttons given below. Generally very high Kpoints are needed for obtaining thermoelectric properties. We assume the Kpoints obtained from above convergence were sufficient [Source-code].

WARNING: Constant relaxation time approximation (10-14 s) and only electronic contribution to thermal conductivity were utilized for calculating ZT.

Electron mass tensor (me unit)

0.02 -0.01 0.0
-0.01 0.01 -0.0
0.0 -0.0 0.01

Hole mass tensor (me unit)

0.02 -0.01 0.0
-0.01 0.01 -0.0
0.0 -0.0 0.01

n-& p-type Seebeck coeff. (µV/K), power-factor (µW/(mK2)), conductivity (1/(*m)), zT (assuming lattice part of thermal conductivity as 1 W/(mK)) at 600K and 1020 cm-3 doping. For mono/multi-layer materials consider Seebeck-coeff only.)

Property xx yy zz
n-Seebeck -273.82 -146.19 -133.83
n-PowerFactor 64.06 137.91 1649.17
n-Conductivity 2997.49 7700.12 21994.87
n-ZT 0.03 0.05 0.62
p-Seebeck 85.39 257.98 258.63
p-PowerFactor 79.63 310.1 849.93
p-Conductivity 4635.93 10920.63 12770.75
p-ZT 0.02 0.16 0.35

Magnetic moment [Reference]

The orbital magnetic moment was obtained after SCF run. This is not a DFT+U calculation, hence the data could be used to predict zero or non-zero magnetic moment nature of the material only.

Total magnetic moment: 5.9254 μB

Magnetic moment per atom: 0.329188888889 μB

Magnetization
Elementsspdtot
C0.0130.3020.00.314
C0.0120.30.00.312
N0.0140.480.00.495
N0.0150.480.00.494
N0.0160.5010.00.517
N0.0160.480.00.495
N0.0160.4990.00.515
N0.0160.4820.00.498
O0.0010.0480.00.049
O0.0010.0470.00.048
Al-0.00.0060.00.006
Al-0.0010.0070.00.006
Al-0.00.0050.00.005
Al-0.0010.0070.00.006
Al-0.006-0.0020.0-0.008
Al-0.006-0.0020.0-0.008
Al-0.0010.0050.00.004
Al-0.0010.0040.00.003

See also

Links to other databases or papers are provided below


mp-10990

ICSD-ID: 409682

AFLOW link

MP link
mp-10990

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