Cu-Ta

Abstract: Atomistic computer simulations are capable of providing insights into physical mechanisms responsible for the extraordinary structural stability and strength of immiscible Cu–Ta alloys. To enable reliable simulations of these alloys, we have developed an angular-dependent potential (ADP) for the Cu–Ta system by fitting to a large database of first-principles and experimental data. This, in turn, required the development of a new ADP potential for elemental Ta, which accurately reproduces a wide range of properties of Ta and is transferable to severely deformed states and diverse atomic environments. The new Cu–Ta potential is applied for studying the kinetics of grain growth in nano-crystalline Cu–Ta alloys with different chemical compositions. Ta atoms form nanometer-scale clusters preferentially located at grain boundaries (GBs) and triple junctions. These clusters pin some of the GBs in place and cause a drastic decrease in grain growth by the Zener pinning mechanism. The results of the simulations are well consistent with experimental observations and suggest possible mechanisms of the stabilization effect of Ta.

Abstract: An angle-dependent interatomic potential has been developed for the Cu-Ta system by crossing two existing potentials for pure Cu and Ta. The cross-interaction functions have been fitted to first-principles data generated in this work. The potential has been extensively tested against first-principles energies not included in the fitting database and applied to molecular dynamics simulations of wetting and dewetting of Cu on Ta. We find that a Cu film placed on a Ta (110) surface dewets from it, forming a Cu droplet on top of a stable Cu monolayer. We also observe that a drop of liquid Cu placed on a clean Ta (110) surface spreads over it as a stable monolayer, while the extra Cu atoms remain in the drop. The stability of a Cu monolayer and instability of thicker Cu films are consistent with recent experiments and first-principles calculations. This agreement demonstrates the utility of the potential for atomistic simulations of Cu-Ta interfaces.

Abstract: Recent molecular dynamics simulations of the growth of [Ni0.8Fe0.2/Au] multilayers have revealed the formation of misfit-strain-reducing dislocation structures very similar to those observed experimentally. Here we report similar simulations showing the formation of edge dislocations near the interfaces of vapor-deposited (111) [NiFe/CoFe/Cu] multilayers. Unlike misfit dislocations that accommodate lattice mismatch, the dislocation structures observed here increase the mismatch strain energy. Stop-action observations of the dynamically evolving atomic structures indicate that during deposition on the (111) surface of a fcc lattice, adatoms may occupy either fcc sites or hcp sites. This results in the random formation of fcc and hcp domains, with dislocations at the domain boundaries. These dislocations enable atoms to undergo a shift from fcc to hcp sites, or vice versa. These shifts lead to missing atoms, and therefore a later deposited layer can have missing planes compared to a previously deposited layer. This dislocation formation mechanism can create tensile stress in fcc films. The probability that such dislocations are formed was found to quickly diminish under energetic deposition conditions.