RECORD of GRANTS and CONTRACTS (past 20 years):
   

1.    "Semiconductor nanowires for sensorics, opto/electronics and energy applications". Project Leader (Sponsor: NIST, 2007 - present )
2.    "Growth and metallization of semiconductor nanowires". PI (Sponsor: NIST, 2004 - 2007 )
3.    "Combinatorial development of electrical contacts to n- and p-GaN semiconductor". Co-PI (Sponsor: NIST/University of Maryland, 2003-2004)
4.    "Metallurgy of the electrical contacts to wide-band-gap semiconductors". Co-PI (Sponsor: NIST/University of Maryland, 2000-2003)
5.    "Evaluation of phase diagrams for selected electronic materials and metal alloys". Co-PI (Sponsor: NIST/University of Florida, 1999/00)
6.    "Thermodynamic evaluation and calculation of phase diagrams for Co-Mo and selected Ni-based alloys". (Sponsor: NIST/University of Florida,
        1997/99)
7.    "Bulk crystal growth and epitaxy of compound semiconductors for visible light emitters".  (Sponsor: NRC/COBASE, 1995/96)
8.    "Assessment of the thermochemistry and phase diagrams for selected wide band gap compound semiconductors". (Sponsor: Stand. Reference Data Program, NIST, 1994/95)

  

SELECTED PUBLICATIONS:

  1. G.S. Aluri, A. Motayed, A.V. Davydov, V. P. Oleshko, K.A. Bertness, and M.V. Rao, Nitro-Aromatic Explosive Sensing Using GaN Nanowire-Titania Nanocluster Hybrids, IEEE Sensors Journal, 2013, v. 13, 1883

  2. R. Venkatesh K.G. Thirumalai, B. Krishnan, A.V. Davydov, J.N. Merrett, Y. Koshka, SiC nanowire vapor–liquid–solid growth using vapor-phase catalyst delivery, J. Mater. Res., 2013, v. 28, 50
  3. S. Krylyuk, D. Paramanik, M. King, A. Motayed, J-Y. Ha, J.E. Bonevich, A. Talin, and A.V. Davydov, Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth, Appl. Phys. Lett., 2012, v. 101, 241119
  4. X-H. Liu, J-W. Wang, S. Huang, F. Fan, X. Huang, Y. Liu, S. Krylyuk, J. Yoo, S.A. Dayeh, A.V. Davydov, S.X. Mao, S.T. Picraux, S. Zhang, J. Li, T. Zhu, and J.Y. Huang. In situ atomic-scale imaging of electrochemical lithiation in silicon, Nature Nanotechnology, 2012, v. 7, 749
  5. D. Ruzmetov, V.P. Oleshko, P.M. Haney, H.J. Lezec, K. Karki, K.H. Baloch, A.K. Agrawal, A.V. Davydov, S. Krylyuk, Y. Liu, J.Y. Huang, M. Tanase, J. Cumings, and A.A. Talin, Electrolyte Stability Determines Scaling Limits for Solid-State 3D Li-ion Batteries, Nanoletters, 2012, v. 12, 505
  6. D. Paramanik, A. Motayed, G.S. Aluri, J.-Y. Ha, S. Krylyuk, A.V. Davydov, M. King, S. McLaughlin, S. Gupta, and H. Cramer, Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme, J. Vac. Sci. Technol. B, 2012, v. 30, 05220
  7. G. Jacopin, L Rigutti, S. Bellei, P. Lavenus, F.H. Julien, A.V. Davydov, D. Tsvetkov, K.A. Bertness, N.A. Sanford, J.B. Schlager, and M. Tchernycheva, Photoluminescence polarization in
    strained GaN/AlGaN core/shell nanowires, Nanotechnology, 2012, v. 23, 325701
  8. R. Bajpai, A. Motayed, A.V. Davydov, K.A. Bertness, and M.E. Zaghloul, UV-Assisted Alcohol Sensing with ZnO-functionalized GaN Nanowires, IEEE Electron Dev. Lett., 2012, v. 33, 1075
  9. R. Bajpai, A. Motayed, A.V. Davydov, V.P. Oleshko, G.S. Aluri, K.A. Bertness, M.V. Rao, and M.E. Zaghloul, UV-assisted alcohol sensing using SnO2 functionalized GaN nanowire devices, Sensors and Actuators B, (2012), v. 171-172, 499
  10. G.S. Aluri, A. Motayed, A.V. Davydov, V.P. Oleshko, K.A. Bertness, N.A. Sanford and R.V. Mulpuri, Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO2–Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors, Nanotechnology, 2012, v. 23, 175501
  11. E.N. Dattoli, A.V. Davydov, and K.D. Benkstein, Tin oxide nanowire sensor with integrated temperature and gate control for multi-gas recognition, Nanoscale, 2012, v. 4, 1760
  12. E.H. Williams, J.A. Schreifels, M.V. Rao, A.V. Davydov,  V.P. Oleshko, N.J. Lin, K.L. Steffens, S. Krylyuk, K.A. Bertness, A.K. Manocchi, and Y. Koshka, Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications, Journal of Materials Research, 2012, v. 28, 68
  13. E.H. Williams, A.V. Davydov, A. Motayed, S.G. Sundaresan, P. Bocchini, L.J. Richter, G. Stan, K. Steffens, R. Zangmeister, J.A. Schreifels, M.V. Rao, Immobilization of streptavidin on 4H–SiC for biosensor development, Applied Surface Science, 2012, v. 258, 6056

  14. G. Stan, S. Krylyuk, A.V. Davydov, and R.F. Cook, Bending manipulation and measurements of fracture strength of silicon and oxidized silicon nanowires by atomic force microscopy, J. Mater. Res., 2012, v. 27, 562

  15. R. Venkatesh K.G. Thirumalai, B. Krishnan, A.V. Davydov, J.N. Merrett, and Y. Koshka, Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires, Crystal Growth & Design, 2012, v. 12, 2221

  16. R. Venkatesh K.G. Thirumalai, B. Krishnan, I. Levin, A.V. Davydov, S. Sundaresan, J.N. Merrett, and Y. Koshka, Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates, Materials Science Forum, v. 717-720 (2012) p. 1279

  17. A. Motayed, S. Krylyuk and A.V. Davydov, Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy, Appl. Phys. Lett., 2011, v. 99, 113107
  18. K.A. Bertness, N.A. Sanford and A.V. Davydov, GaN Nanowires Grown by Molecular Beam Epitaxy, IEEE J. Selected Topics in Quantum Electronics, 2011, v. 17, 847

  19. G.S. Aluri, A. Motayed, A.V. Davydov, V.P. Oleshko, K.A. Bertness, N.A. Sanford and M.V. Rao, Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants, Nanotechnology, 2011, v. 22, 295503

  20. A. Sanders, P. Blanchard, K. Bertness, M. Brubaker, C. Dodson, T. Harvey, A. Herrero, D. Rourke, J. Schlager, N. Sanford, A.N. Chiaramonti, A.V. Davydov, A. Motayed and D. Tsvetkov,  Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires, Nanotechnology, 2011, v. 22, 465703
  21. M.D. Brubaker, Igor Levin, A.V. Davydov, D.M. Rourke, N.A. Sanford, V.M. Bright and K.A. Bertness, Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy, J. Appl. Phys., 2011, v. 110, 053506

  22. J.Y. Ha, B.D. Sosnowchik, L. Lin, D.H. Kang, and A.V. Davydov, Patterned Growth of TiO2 Nanowires on Titanium Substrates, Applied Physics Express, 2011, v.4, 065002

  23. E. Strelcov, A.V. Davydov, U. Lanke, C. Watts, and A. Kolmakov, In Situ Monitoring of the Growth, Intermediate Phase Transformations and Templating of Single Crystal VO2 Nanowires and Nanoplatelets, ACS Nano, 2011, v. 5, 3373

  24. S. Krylyuk,  A.V. Davydov, and I. Levin, Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure, ACS Nano, 2011, v. 5, 656
  25. A. Motayed, J.E. Bonevich, S. Krylyuk, A.V. Davydov, G. Aluri, and M.V. Rao, Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires, Nanotechnology, 2011, v. 22, 75206
  26. B. Krishnan, R. Venkatesh, K.G. Thirumalai, Y. Koshka, S. Sundaresan, I. Levin,  A.V. Davydov, J.N. Merrett, Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates, Crystal Growth & Design, 2011, v. 11, 538
  27. R.A. Bernal, R. Agrawal, B. Peng, K.A. Bertness, N.A. Sanford, A.V. Davydov, and H.D. Espinosa, Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation, Nanoletters, 2011, v. 11, 548
  28. G. Stan, S. Krylyuk,  A.V. Davydov, and R. F. Cook, Compressive Stress Effect on the Radial Elastic Modulus of Oxidized Si Nanowires, Nanoletters, 2010, v. 10, 2031
  29. S. Krylyuk, A.V. Davydov, I. Levin, A. Motayed, and M.D. Vaudin, Rapid thermal oxidation of silicon nanowires, Applied Physics Letters, 2009, 94, 63113
  30. A. Motayed and A.V. Davydov, GaN-nanowire/amorphous-Si core-shell heterojunction diodes, Applied Physics Letters, 2008, v. 93, 193102
  31. A. Motayed, A.V. Davydov, S. N. Mohammad, and J. Melngailis, Experimental investigation of electron transport properties of gallium nitride nanowires, Journal of Applied Physics, 2008, v. 104, 24302
  32. S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, A. Motayed, A.V. Davydov, Low-frequency noise in GaN nanowire transistors, Journal of Applied Physics, 2008, v. 103, 064501
  33. D.H. Hill, R.A. Bartynski, N.V. Nguyen, A.V. Davydov, D.C. Horowitz, and M.M. Frank,  The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films, Journal of Applied Physics, 2008, v. 103, 093712
  34. G. Stan, S. Krylyuk, A.V. Davydov, M. Vaudin, L.A. Bendersky, and R.F. Cook, Surface effects on the elastic modulus of Te nanowires, Applied Physics Letters, 2008, v. 92, 241908
  35. A.L. Syrkin, V. Ivantsov, A. Usikov, V.A. Dmitriev, G. Chambard, P. Ruterana, A.V. Davydov, S.G. Sundaresan, E. Lutsenko, A.V. Mudryi, E.D. Readinger, G.D. Chern-Metcalfe, and M. Wraback, InN layers grown by the HVPE, Physica Status Solidi C, 2008, v. 5, 1792
  36. A. Usikov, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Syrkin, V. Dmitriev, A.Yu. Nikiforov, S. G. Sundaresan, S.J. Jeliazkov, and A.V. Davydov, Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE, Physica Status Solidi C, 2008, v. 5, 1829
  37. A.Yu. Zavrazhnov, I.D. Zartsyn, A.V. Naumov, V.P. Zlomanov and A.V. Davydov, Composition Control of Low-Volatility Solids Through Chemical Vapor Transport Reactions. I. Theory of Selective Chemical Vapor Transport, Journal of Phase Equilibria and Diffusion, 2007, v. 28, 510
  38. S.G. Sundaresan, A.V. Davydov, M.D. Vaudin, I. Levin, J.E. Maslar, Y-L. Tian, and M.V. Rao,  Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts, Chemistry of Materials, 2007, v. 19, 5531
  39.   A. Motayed, A.V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes, Appl. Phys. Lett., 2007, v. 90, 183120
  40. S.G. Sundaresan, M.V. Rao, Y-L. Tian, J.A. Schreifels, M.C. Wood, K.A. Jones, and A.V. Davydov, Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC, J. of Electronic Materials, 2007, v. 36, 324
  41. O. Kryliouk, H.J. Park, Y.S. Won, T. Anderson, A.V. Davydov, I. Levin, J.H. Kim, and J.A. Freitas,  Controlled synthesis of single-crystalline InN nanorods,  Nanotechnology, 2007, v. 18, 135606
  42. A. Motayed, M. Vaudin, A.V. Davydov, J. Melngailis, M. He, and S. N. Mohammad, Diameter dependent transport properties of gallium nitride nanowire field effect transistors, Appl. Phys. Lett., 2007, v. 90, 043104
  43. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Simple model for dielectrophoretic alignment of gallium nitride nanowires, J. Vac. Sci. Technol.,  2007, v. 25B, 120
  44. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique, - J. Appl. Phys., 2006, v. 100, 114310
  45. N. Mahadik, M.V. Rao, and A.V. Davydov, Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN, - J. Electronic Materials, 2006, v. 35, 2035
  46.  A. Motayed, A.V. Davydov, M.D. Vaudin, I. Levin. J. Melngailis, and S. N. Mohammad, Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition, - J. Appl. Phys., 2006, v. 100, 024306 
  47. K.A. Bertness, A. Roshko, N.A. Sanford, J.M. Barker, A.V. Davydov, Spontaneously grown GaN and AlGaN nanowires, - J. Cryst. Growth, 2006, v. 287, 522
  48. K.A. Bertness, N.A. Sanford, J.M. Barker, J.B. Schlager, A. Roshko, A.V. Davydov, I. Levin, Catalyst-free growth of GaN nanowires,-  J. of Electronic Materials, 2006, v. 35,  576
  49. J.E. Van Nostrand, K.L. Averett, R. Cortez, J. Boeckl, C.E. Stutz, N.A. Sanford, A.V. Davydov, J.D. Albrecht, Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns, - J. of Crystal Growth, 2006, v. 287, 500
  50. A.V. Davydov, A. Motayed, W.J. Boettinger, R.S. Gates, Q. Z. Xue, H. C. Lee, Y. K. Yoo, Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN, Phys. Stat. Sol. C, 2005, v. 2, p. 2551
  51. I. Levin, A.V. Davydov, B. Nikoobakht, and N. Sanford, Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates, - Appl. Phys. Letters, 2005, v. 87, 103110
  52. N. V. Nguyen, A.V. Davydov, and D. Chandler-Horowitz, Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, - Appl. Phys. Letters, 2005, v. 87, 192903
  53. M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A. Davydov, A.J. Shapiro, Influence of polarity on GaN thermal stability, - J. Cryst. Growth, 2005, v. 274(1-2), 38
  54. N.A. Sanford, A.V. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park and J.Y. Han, R.J. Molnar, Measurement of Second Order Susceptibilities of GaN and AlGaN, J. Appl. Phys., 2005, v.97, p. 053512
  55. A. Motayed, A.V. Davydov, W. J. Boettinger, D. Josell, A.J. Shapiro, I. Levin, T. Zheleva, G.L. Harris, Realization of improved metallization-Ti/Al/Ti/W/Au Ohmic contacts to n-GaN for high-temperature application, Phys. Stat. Sol. C, 2005, v. 2, p. 2536
  56. N.A. Sanford, L.H. Robins, M.H. Gray, J.E. Van Nostrand, C. Stutz, R. Cortez, A.V. Davydov, A. Shapiro, I. Levin, and A. Roshko, Fabrication and analysis of GaN nanorods grown by MBE, Phys. Stat. Sol. C, 2005, v. 2, p. 2357
  57. N.A. Sanford, A. Munkholm, M.R. Krames, A. Shapiro, I. Levin, A.V. Davydov, S. Sayan, L.S. Wielunski, and T.E. Madey, Refractive index and birefringence of InGaN films grown by MOCVD, Phys. Stat. Sol. C, 2005, v. 2, p. 2783
  58. A.V. Davydov, L.A. Bendersky, W.J. Boettinger, D. Josell, M.D. Vaudin, K.-S. Chang c and  I. Takeuchi, Combinatorial Investigation of Structural Quality of Au/Ni Contacts on GaN,  Appl. Surf. Science, 2004, v. 223(1-3), p. 24;
  59. P. Schenck, D.L. Kaiser, A.V. Davydov, High-Throughput Characterization of the Optical Properties of Compositionally Graded Combinatorial Films, -Appl. Surf. Science, 2004, v. 223(1-3), p. 200
  60. B. Nikoobakht, A. Davydov, and S.J. Stranick, Controlling the Growth Direction of ZnO Nanowires on c-Plane Sapphire, in: “Nanoparticles and Nanowire Building Blocks—Synthesis, Processing, Characterization and Theory”, MRS Symp. Proc. 818, Warrendale, PA, 2004, M8.25.1
  61. A. Motayed, K.A. Jones, M.A. Derenge, M.C. Wood, D. N. Zakharov, Z. Liliental-Weber, D.J. Smith, A.V. Davydov, W.T. Anderson, A.A. Iliadis, and S. Noor Mohammad, Electrical, Microstructural and Thermal Stability Characteristics of Ta/Ti/Ni/Au Contacts to n-GaN, – J. Appl. Phys., 2004, v. 95(3), p. 1516
  62. D.B. Migas, L. Miglio, M. Rebien, W. Henrion, P. Stauss, A.G. Birdwell, A.V. Davydov, V.L. Shaposhnikov, and V.E. Borisenko, Structural, electronic, and optical properties of beta-(Fe1-xCox)Si2, - Physical Review B, 2004, v. 69, p. 115204 
  63. A. Sanford, L. H. Robins, A. V. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars, Comparative Studies of Refractive Index for MOCVD and HVPE AlxGa1-xN films Grown on Sapphire Substrates, – J. Appl. Phys., 2003, v. 94(5), p. 2980
  64. A.V. Davydov and U.R. Kattner, Revised Thermodynamic Description of the Co-Mo System, – Journal of Phase Equilibria, 2003, v. 24(3), p. 209
  65. C.J. Lu, A.V. Davydov, D. Josell, and L.A. Bendersky, Interfacial reactions of Ti/n-GaN contacts at elevated temperature, – J. Appl. Phys., 2003, v. 94, p. 245
  66. J. Unland, B. Onderka, A. Davydov, R. Schmid-Fetzer, Thermodynamics and Phase Stability in the Ga-N System, – J. Cryst. Growth, 2003, v. 256, p. 33
  67. V.P. Zlomanov, A.J. Zavrazhnov, A.V. Davydov, Non-stoichiometry and P-T-x Diagrams of Binary Systems, - Intermetallics, 2003, v.11, p. 1287
  68. A. Motayed, A.V. Davydov, L.A. Bendersky, M.C. Wood, M.A. Derenge, D.F. Wang, K.A. Jones, and S.N. Mohammad, Novel high-transparency Ni/Au bilayer contacts to n-type GaN, - J. Appl. Phys., 2002, v.92, p. 5218
  69. A.V. Davydov, W.J. Boettinger, U.R. Kattner and T.J. Anderson, Thermodynamic Assessment of the Gallium-Nitrogen System, - Phys. Stat. Sol. A, 2001, v. 188, p. 407
  70. M.A. Mastro, O.M. Kryliouk, M.D. Reed, T.J. Anderson, A. Davydov, A.J. Shapiro, Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2, - Phys. Stat. Sol. A, 2001, v. 188, p. 467
  71. V. Soukhoveev, V. Ivantsov, Yu. Melnik, A. Davydov, D. Tsvetkov, K. Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, V. Dmitriev, Characterization of 2.5” Diameter Bulk GaN Grown from Melt-Solution, - Phys. Stat. Sol. A, 2001, v. 188, p. 411
  72. D. Tsvetkov, Yu. Melnik, A. Davydov, A. Shapiro, O. Kovalenkov, J.B. Lam, J.J. Song, V. Dmitriev, Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by HVPE, - Phys. Stat. Sol. A, 2001, v. 188, p. 429
  73. A.V. Davydov, U.R. Kattner, D. Josell, J.E. Blendell, R.M. Waterstrat, A.J. Shapiro, and W.J. Boettinger, Determination of the CoTi Congruent Melting Point and Thermodynamic Re-assessment of the Co-Ti System, - Metall. & Mater. Trans. A., v. 32A, 2001, p. 2175
  74. M. Ahonen, B. Liu, A. Davydov, E. Ristolainen, P. Holloway, Interfacial Reactions Between Metals and Gallium Nitride. – in: “31st State-of-the-Art Program on Compound Semiconductors”  Ed. D.N. Buckley, S.N.G. Chu, and F. Ren, ECS Proceedings, 1999, v. 99-17, p.114
  75. A. Davydov, U.R. Kattner, Thermodynamic Assessment of the Co-Mo System. – Journal of Phase Equilibria, 1999, v. 20(1), p. 5
  76. A. Davydov, T.J. Anderson, Thermodynamic Analysis of the Ga-N System. – In: “III-V Nitride Materials and Processes III“ Ed. T.D. Moustakas et al.,  ECS Proceedings, 1998, v. 98-18, p. 38
  77. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Comparison of plasma chemistries for dry etching thin film electroluminescent display materials. - J. Vacuum Sci. Technology A, 1998, v. 16(4), p. 2177
  78. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays. – J. Vacuum Sci. Technology A, 1998, v. 16(3), p.1944
  79. C.-H. Chang, B.J. Stanbery, A. Morrone, A. Davydov, T.J. Anderson, Novel multilayer process for CuInSe2 thin film formation by rapid thermal processing. – In:  “Thin-film structures for photovoltaics” (MRS, Boston, 1997). MRS Symposium Proceedings, 1998, v. 485, p. 163
  80. B.J. Stanbery, A. Davydov, C.H. Chang, T.J. Anderson, Reaction engineering and precursor film deposition for CuInSe2 synthesis. - 14th  NREL/SNL Photovoltaic Program Review Meeting, Lakewood, CO, 1996.-In AIP Conference Proceedings: Photovoltaic Advanced Research and Development Project (AIP, NY, 1997),  v. 394, p.579
  81. H. P. Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J.E. Yu, B. Pathangey, K.S. Jones and T.J. Anderson, Carrier confinement effects in epitaxial silicon quantum wells prepared by MOCVD. -In: “Microcrystalline and nanocrystalline semiconductors” (MRS, Pittsburgh, 1995), MRS Symposium Proceedings, v. 358, p.987
  82. E. Bretschneider, A. Davydov, C. McCreary, , Li Wang, T.J. Anderson, H.P. Maruska, P. Norris, I. Goepfert, T.D. Moustakas, ZnS/Si/ZnS quantum well structures for visible light emission. -In: “Surface/interface and stress effects in electronic material nanocrystals”, (MRS, Pittsburgh, 1996), MRS  Symposium Proceedings, v. 405, p.295
  83. C.H. Chang, A. Davydov, B.J. Stanbery, T.J. Anderson, Thermodynamic assessment of the Cu-In-Se system and application to thin film photovoltaics. - 25th IEEE Photovoltaic Specialist Conference, Washington, DC, 1996. Proceedings, p.849
  84. A.V. Davydov, M.H. Rand and B.B. Argent, Review of heat capacity data for tellurium. -CALPHAD, 1995, v.19(3). p.375
  85. A.V. Davydov, V.P. Zlomanov, Optimization of the thermodynamic properties and phase diagram of the Ga-As system.- Inorg. Materials, 1994, v.30(3), p. 309
  86. B.A. Akimov, A.V. Albul, A.V. Davydov, V.P. Zlomanov, L.I. Ryabova, M.E. Tamm, Pressure Sensor.- SU Patent No 1527524 A1 (1989)
  87. A.V. Davydov, M.E. Tamm, V.P. Zlomanov, Phase equilibria in the thallium selenide-indium selenide system.  – Russ. J. Inorg. Chem., 1988, v.33(7), p.1067
  88. A.V. Davydov, M.E. Tamm, V.P. Zlomanov, Solid solutions in the InTe-TlTe  system. – Russ. J. Inorg. Chem.,1987, v. 32(7), p.1055
  89. N.Yu. Artyushina, A.V. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Modulation of the energy band relief of single crystal 2PbTe-TlBiTe2 alloys. -Sov. Phys. Semicond., 1986, v.20(2), p.158
  90. B.A. Akimov, A.B. Albul, A.V. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Transport effects and percolation conduction in the In1-xTlxTe solid solutions.-Sov. Physics - Solid State, 1986, v. 28(9), p.1502

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