Abstract: Bulk and multilayered thin film crystals of II-VI semiconductor compounds are the leading materials for infrared sensing, γ-ray detection, photovoltaics, and quantum dot lighting applications. The key to achieving high performance for these applications is reducing crystallographic defects. Unfortunately, past efforts to improve these materials have been prolonged due to a lack of understanding with regards to defect formation and evolution mechanisms. To enable high-fidelity and high-efficiency atomistic simulations of defect mechanisms, this paper develops a Stillinger-Weber interatomic potential database for semiconductor compounds composed of the major II-VI elements Zn, Cd, Hg, S, Se, and Te. The potential's fidelity is achieved by optimizing all the pertinent model parameters, by imposing reasonable energy trends to correctly capture the transformation between elemental, solid solution, and compound phases, and by capturing exactly the experimental cohesive energies, lattice constants, and bulk moduli of all binary compounds. Verification tests indicate that our model correctly predicts crystalline growth of all binary compounds during molecular dynamics simulations of vapor deposition. Two stringent cases convincingly show that our potential is applicable for a variety of compound configurations involving all the six elements considered here. In the first case, we demonstrate a successful molecular dynamics simulation of crystalline growth of an alloyed (Cd0.28Zn0.68Hg0.04) (Te0.20Se0.18S0.62) compound on a ZnS substrate. In the second case, we demonstrate the predictive power of our model on defects, such as misfit dislocations, stacking faults, and subgrain nucleation, using a complex growth simulation of ZnS/CdSe/HgTe multilayers that also contain all the six elements considered here. Using CdTe as a case study, a comprehensive comparison of our potential with literature potentials is also made. Finally, we also propose unique insights for improving the Stillinger-Weber potential in future developments.

Abstract: CdTe/CdSe core/shell structured quantum dots do not suffer from the defects typically seen in lattice-mismatched films and can therefore lead to improved solid-state lighting devices as compared to the multilayered structures (e.g., In_xGa_1–xN/GaN). To achieve these devices, however, the quantum dots must be optimized with respect to the structural details at an atomistic level. Molecular dynamics simulations are effective for exploring nano structures at a resolution unattainable by experimental techniques. To enable accurate molecular dynamics simulations of CdTe/CdSe core/shell structures, we have developed a full Cd–Te–Se ternary bond-order potential based on the analytical formalisms derived from quantum mechanical theories by Pettifor et al. A variety of elemental and compound configurations (with coordination varying from 1 to 12) including small clusters, bulk lattices, defects, and surfaces are explicitly considered during potential parametrization. More importantly, enormous iterations are performed to strictly ensure that our potential can simulate the correct crystalline growth of the ground-state structures for Cd, Te, and Se elements as well as CdTe, CdSe, and CdTe_1–xSe_x compounds during molecular dynamics vapor deposition simulations. Extensive test simulation results clearly indicate that our new Cd–Te–Se potential has unique advantages over the existing literature potential involving Cd, Te, and Se elements.

Abstract: In the upcoming process to overcome the limitations of the standard von Neumann architecture, synaptic electronics is gaining a primary role for the development of in-memory computing. In this field, Ge-based compounds have been proposed as switching materials for nonvolatile memory devices and for selectors. By employing the classical molecular dynamics, we study the structural features of both the liquid states at 1500 K and the amorphous phase at 300 K of Ge-rich and Se-rich chalcogenides binary Ge_xSe_1-x systems in the range 0.4 ≤ x ≤ 0.6. The simulations rely on a model of interatomic potentials where ions interact through steric repulsion, as well as Coulomb and charge-dipole interactions given by the large electronic polarizability of Se ions. Our results indicate the formation of temperature-dependent hierarchical structures with short-range local orders and medium-range structures, which vary with the Ge content. Our work demonstrates that nanosecond-long simulations, not accessible via ab initio techniques, are required to obtain a realistic amorphous phase from the melt. Our classical molecular dynamics simulations are able to describe the profound structural differences between the melt and the glassy structures of GeSe chalcogenides. These results open to the understanding of the interplay between chemical composition, atomic structure, and electrical properties in switching materials.

Abstract: In the upcoming process to overcome the limitations of the standard von Neumann architecture, synaptic electronics is gaining a primary role for the development of in-memory computing. In this field, Ge-based compounds have been proposed as switching materials for nonvolatile memory devices and for selectors. By employing the classical molecular dynamics, we study the structural features of both the liquid states at 1500 K and the amorphous phase at 300 K of Ge-rich and Se-rich chalcogenides binary Ge_xSe_1-x systems in the range 0.4 ≤ x ≤ 0.6. The simulations rely on a model of interatomic potentials where ions interact through steric repulsion, as well as Coulomb and charge-dipole interactions given by the large electronic polarizability of Se ions. Our results indicate the formation of temperature-dependent hierarchical structures with short-range local orders and medium-range structures, which vary with the Ge content. Our work demonstrates that nanosecond-long simulations, not accessible via ab initio techniques, are required to obtain a realistic amorphous phase from the melt. Our classical molecular dynamics simulations are able to describe the profound structural differences between the melt and the glassy structures of GeSe chalcogenides. These results open to the understanding of the interplay between chemical composition, atomic structure, and electrical properties in switching materials.

Abstract: In the upcoming process to overcome the limitations of the standard von Neumann architecture, synaptic electronics is gaining a primary role for the development of in-memory computing. In this field, Ge-based compounds have been proposed as switching materials for nonvolatile memory devices and for selectors. By employing the classical molecular dynamics, we study the structural features of both the liquid states at 1500 K and the amorphous phase at 300 K of Ge-rich and Se-rich chalcogenides binary Ge_xSe_1-x systems in the range 0.4 ≤ x ≤ 0.6. The simulations rely on a model of interatomic potentials where ions interact through steric repulsion, as well as Coulomb and charge-dipole interactions given by the large electronic polarizability of Se ions. Our results indicate the formation of temperature-dependent hierarchical structures with short-range local orders and medium-range structures, which vary with the Ge content. Our work demonstrates that nanosecond-long simulations, not accessible via ab initio techniques, are required to obtain a realistic amorphous phase from the melt. Our classical molecular dynamics simulations are able to describe the profound structural differences between the melt and the glassy structures of GeSe chalcogenides. These results open to the understanding of the interplay between chemical composition, atomic structure, and electrical properties in switching materials.